BC2301(2.8A)

Plastic-Encapsulate MOSFETS N-Channel 20-V(D-S) MOSFET SOT-23 FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 1. GATE 2. SOURCE 3. DRAIN MARKING: 2302 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID 2.8 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation PD 0.35 W RθJA 357 ℃/W Operating Junction TJ 150 Storage Temperature TSTG -55 ~+150 ℃ Thermal Resistance from Junction to Ambient (t≤5s) 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V A Electrical characteristics (Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min Typ Max 0.95 1.2 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA 20 VGS(th) VDS =VGS, ID =50µA 0.65 Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA Gate-threshold voltage a Drain-source on-resistance rDS(on) V VGS =4.5V, ID =3.6A 0.045 0.060 VGS =2.5V, ID =3.1A 0.070 0.115 Forward transconductancea gfs VDS =5V, ID =3.6A 8 Diode forward voltage VSD IS=0.94A,VGS=0V 0.76 1.2 4.0 10 Ω S V Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 1.5 Ciss 300 Input capacitance b Output capacitance b Reverse transfer capacitance Switching Coss b VDS =10V,VGS =4.5V,ID =3.6A VDS =10V,VGS =0V,f=1MHz Crss nC 0.65 pF 120 80 b Turn-on delay time Rise time td(on) tr Turn-off delay time Fall time td(off) VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω tf 7 15 55 80 16 60 10 25 Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. ns Typical Characteristics Output Characteristics Transfer Characteristics 10 15 VGS=3.5V,3.0V,2.5V Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=2.0V 8 6 DRAIN CURRENT ID 9 DRAIN CURRENT ID (A) (A) 12 VGS=1.5V 0 0.0 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 10 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE RDS(ON) —— ID 2.0 VGS 2.5 (V) VGS 0.20 100 Ta=25℃ Ta=25℃ Pulsed Pulsed 0.16 RDS(ON) (mΩ) ( Ω) 80 60 ON-RESISTANCE RDS(ON) 4 2 3 ON-RESISTANCE 6 VGS=2.5V 40 VGS=4.5V 0.12 0.08 ID=4.5A 0.04 20 0 0.00 0 5 10 15 DRAIN CURRENT 20 ID 25 30 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 8 VGS (V) 10 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.