DTA114EE

MMDTA114EE PNP Silicon Epitaxial Planar Transistor   for switching and interface circuit and drive circuit applications Collector (Output) Base (Input) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value VCEO -50 Collector Emitter Voltage Unit V Input Voltage VI Collector Current IC -100 Power Dissipation Ptot 150 mW Tj 150 ℃ Tstg - 55 to + 150 ℃ Junction Temperature Storage Temperature Range +10 to - 40 V mA Characteristics at Ta = 25℃ Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE =-5V, IC =-5mA hFE 30 - - - Collector Base Cutoff Current at VCB =-50V ICBO - - -500 nA Emitter Base Cutoff Current at VEB =-5V IEBO - - -0.88 mA VCE(sat) - - -0.3 V Input on Voltage at VCE =-0.3V, IC =-10mA VI(on) - - -3 V Input off Voltage at VCE =-5V, IC =-100uA VI(off) -0.5 - V Transition frequency at VCE =-10V, I E=-5mA, f=-100MHz fT - 250 - MHz Input Resistance R1 7 10 13 KΩ Resistance Ratio R 2 / R1 0.8 1 1.2 - Input Resistance R1 +R2 20 22 ＫΩ Collector Emitter Saturation Voltage at IC =-10mA, IB=-0.5mA Page 1 of 3 - 2/21/2014   MMDTA114EE Page 2 of 3 2/21/2014 Page 3 of 3 2/21/2014