WST3415A

WST3415A P-Ch MOSFET General Description Product Summery The WST3415A is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -20V 58mΩ -5.3A Applications The WST3415A meet the RoHS and Green Product requirement , with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z ESD:3KV z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage V VGS Gate-Source Voltage -20 ±12 ID@TC=25℃ Continuous Drain Current, VGS @ -4.5V1 -5.3 A ID@TC=70℃ 1 -3.0 A -17 A IDM Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 V PD@TA=25℃ Total Power Dissipation 1.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Typ. Max. Unit --- 110 ℃/W --- 70 ℃/W Rev:1.0 May.2019 WST3415A P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.016 --- V/℃ VGS=-4.5V , ID=-3A --- 58 64 VGS=-2.5V , ID=-2A --- 67 78 --- 66 75 -0.3 -0.75 -1.0 V --- 3.97 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- 1 VDS=-16V , VGS=0V , TJ=55℃ --- --- 5 VGS=-1.8V , ID=-1A VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 14 --- S --- 6.2 9 --- 2.2 2.5 Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.8 2.6 Turn-On Delay Time --- 2.7 5.5 Td(on) VDS=-15V , VGS=-4.5V , ID=-3A uA nC Rise Time VDD=-10V , VGS=-4.5V , --- 8.4 15 Turn-Off Delay Time RG=3.3Ω, ID=-3A --- 38 78 Fall Time --- 6 12 Ciss Input Capacitance --- 575 810 Coss Output Capacitance --- 98 135 Crss Reverse Transfer Capacitance --- 75 110 Min. Typ. Max. --- --- -1 A --- --- -17 A --- --- -1 V --- 28 --- nS --- 25 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Unit Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t