DF10S

DF005S-DF10S SILICON BRIDGE RECTIFIERS FEATURES z I Surge overload rating to 30 Amperes peak - Dim Min Max A 8.20 8.60 6.50 + B z DB-S Rating to 1000V PRVP ~ Reliable low cost construction utilizing molded ~ plastic technique results in inexpensive product 6.10 2.35 2.65 D 9.80 10.20 0.35 E 0.15 K F 0.90 A G H C z Ideal for printed circuit board E z B C G F D F H 2.50 2.80 I 1.00 1.40 4.80 5.20 K z Lead solderable per MIL-STD-202 method 208 z Glass passivated chip junctions z Plastic material has UL flammability classification94V-O 1.50 0.20MAX All Dimensions in mm Maximum Ratings (@TA = 25°C unless otherwise specified) Symbol DF005S Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 V RMS Reverse Voltage VRMS 35 70 140 280 420 560 700 V DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Characteristic Maximum average forward Output current @TA=40℃ Peak forward surge current DF01S DF02S DF04S DF06S DF08S DF10S UNITS IF(AV) 1.0 A IFSM 30 A 3.7 As 8.3ms single half-sine-wave superimposed on rated load 2 Current squared time t < 8.3ms , Ta = 25℃ It 2 Thermal Characteristics Characteristic Typical thermal resistance per leg Operating junction temperature range Storage temperature range Symbol DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNITS R ΘJA 66 R ΘJC 30 RθJL 28 TJ - 55 ---- + 150 ℃ TSTG - 55 ---- + 150 ℃ ℃/W Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward voltage at 1.0 A Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ Symbol DF005S VF IR ht t p : // Revision:20170701-P1 DF01S DF02S DF04S 1.1 DF06S DF08S DF10S UNITS V 5.0 μA 0.5 mA www.lgesemi .c o m mail:lge@lgesemi.com DF005S-DF10S SILICON BRIDGE RECTIFIERS Device Package SPQ/PCS DB151S--DB157S DBS 1500/REEL ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com