IRLML2502

UMW R UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS UMW IRLML2502 N-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX   20 V SOT-23 45mΩ@4.5V  4.2A 80 mΩ@ 2.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices z DC/DC Converter z MARKING Equivalent Circuit 1G Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID 4.2 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) PD 1.25 RθJA 312.5 Unit V A W ℃/W Operating Junction TJ 150 Storage Temperature TSTG -55 ~+150 www.umw-ic.com 1 ℃ 友台半导体有限公司 UMW R UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA 20 VGS(th) VDS =VGS, ID =50µA 0.65 Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA Gate-threshold voltage a Drain-source on-resistance Forward transconductance a Diode forward voltage rDS(on) 1.2 VGS =4.5V, ID =4.2A 0.035 0.045 VGS =2.5V, ID =3.6A 0.050 0.080 gfs VDS =5V, ID =3.6A 8 VSD IS=0.94A,VGS=0V 0.76 1.2 4.0 10 V Ω S V Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 1.5 Ciss 300 Input capacitance b Output capacitance b Reverse transfer capacitanceb Switching Coss VDS =10V,VGS =4.5V,ID =3.6A VDS =10V,VGS =0V,f=1MHz nC 0.65 pF 120 80 Crss b Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω 7 15 55 80 16 60 10 25 ns Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS Output Characteristics 15 VGS=3.5V,3.0V,2.5V Transfer Characteristics 10 Ta=25℃ Ta=25℃ Pulsed VGS=2.0V Pulsed 8 6 DRAIN CURRENT ID 9 DRAIN CURRENT ID (A) (A) 12 VGS=1.5V 4 2 3 0 6 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 100 VDS 0 0.0 10 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE RDS(ON) —— ID 2.0 VGS VGS 0.20 Ta=25℃ Ta=25℃ Pulsed Pulsed 0.16 RDS(ON) 60 ON-RESISTANCE RDS(ON) (mΩ) ( Ω) 80 ON-RESISTANCE 2.5 (V) VGS=2.5V 40 VGS=4.5V 20 0 0.12 0.08 ID=4.5A 0.04 0 5 10 15 DRAIN CURRENT www.umw-ic.com 20 ID 25 0.00 30 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 3 8 VGS 10 (V) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 4 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司