SFT1350-TL-H

SFT1350-TL-H www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.053 at VGS = - 10 V - 25 0.062 at VGS = - 4.5 V - 20 VDS (V) - 60 Qg (Typ) 26 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 • High Side Switch for Full Bridge Converter • DC/DC Converter for LCD Display S G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note) Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Parameter Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C - 20 A - 100 IAS - 22 EAS 24.2 38.5 PD mJ c W 2.3b, c TJ, Tstg Operating Junction and Storage Temperature Range V - 25 ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on TC = 25 °C. Symbol t  10 s Steady State RthJA RthJC Typical Maximum Unit 17 45 2.7 21 55 3.25 °C/W 1 SFT1350-TL-H www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise note) Symbol Parameter Test Conditions Min . Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) V -3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 ° C VDS  - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A Drain-Source On-State Resistancea a Forward Transconductance RDS(on) - 125 - 30 A 0.053 0.060 VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.102 VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.120 gfs µA VGS = - 4.5 V, ID = - 5 A 0.062 VDS = - 15 V, ID = - 10 A 22  0.070 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 26 c Gate-Source Charge Qgs Gate-Drain Chargec Qgd c Rise Timec Turn-Off Delay VDS = - 30 V, VGS = - 10 V, ID = - 10 A Fall Timec f = 1 MHz td(on) tr Timec td(off) 1710 130 pF 40 nC 4.5 7 Rg Gate Resistance Turn-On Delay Time 1140 VGS = 0 V, VDS = - 25 V, f = 1 MHz VDD = - 30 V, RL = 3  ID  - 19 A, VGEN = - 10 V, Rg = 2.5  tf Drain-Source Body Diode and Characteristics (TC = 25 °C)  7 8 15 9 15 65 100 30 45 ns b IS - 30 Pulsed Current ISM - 30 Forward Voltagea VSD IF = - 19 A, VGS = 0 V -1 - 1.5 V trr IF = - 19 A, di/dt = 100 A/µs 41 61 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 SFT1350-TL-H www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 30 VGS = 10 thru 5 V 4V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 10 3V 5 20 15 10 TC = 125 °C 5 25 °C - 55 °C 0 0 2 4 6 8 0 0.0 10 0.5 1.0 VDS - Drain-to-Source Voltage (V) 35 2.5 3.0 3.5 4.0 4.5 0.12 TC = - 55 °C 0.10 RDS(on) - On-Resistance (Ω) 30 g fs - Transconductance (S) 2.0 Transfer Characteristics Output Characteristics 25 °C 25 125 °C 20 15 10 5 0 0.08 VGS = 4.5 V 0.06 VGS = 10 V 0.04 0.02 0.00 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 1800 20 V GS - Gate-to-Source Voltage (V) 1500 C - Capacitance (pF) 1.5 VGS - Gate-to-Source Voltage (V) Ciss 1200 900 600 300 Coss Crss 0 0 VDS = 30 V ID = 10 A 16 12 8 4 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance 50 60 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge 3 SFT1350-TL-H www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 ID = 10 A I S - Source Current (A) RDS(on) - On-Resistance (normalized) 1.9 VGS = 10 V 1.6 1.3 1.0 10 TJ = 150 °C TJ = 25 °C 0.7 1 0.4 - 50 - 25 0 25 50 75 100 125 150 0.3 0.0 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 25 100 Limited by rDS(on)* 100 ms 10 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 5 1s DC 0.1 BVDSS Limited 0.01 0 0 25 50 75 100 125 150 10 s 1 TC = 25 °C Single Pulse 0.001 0.1 TC - Case Temperature (°C) * VGS Maximum Drain Current vs. Case Temperature 1 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 4 100 600 SFT1350-TL-H www.VBsemi.com THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10- 2 10 -1 1 10 100 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 5 SFT1350-TL-H www.VBsemi.com TOĆ251AA E A L2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b e c A1 Note: Dimension L3 is for reference only. 6 MILLIMETERS c1 b2 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 3.89 9.53 0.153 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 SFT1350-TL-H www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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