74HC07N

74HC07 74HC07 HEX BUFFER (OPEN DRAIN) ■ ■ ■ ■ ■ HIGH SPEED: tPD = 6ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.) WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 07 DIP SOP TSSOP ORDER CODES PACKAGE DIP SOP DESCRIPTION The 74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. TUBE 74HC07B 74HC07M T&R 74HC07RM13TR All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS http://www.hgsemi.net 1 2015 JAN 74HC07 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 NAME AND FUNCTION 1A to 6A Data Inputs 1Y to 6Y Data Outputs GND VCC Ground (0V) 14 Positive Supply Voltage TRUTH TABLE A Y L H L Z Z : High Impedance ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VO DC Output Voltage IIK DC Input Diode Current -0.5 to VCC + 0.5 ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) V ± 50 mA 500(*) mW -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Value Supply Voltage Unit 2 to 6 V VI Input Voltage 0 to VCC V VO Output Voltage 0 to VCC V Top Operating Temperature -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns Input Rise and Fall Time tr, tf http://www.hgsemi.net 2 2015 JAN 74HC07 DC SPECIFICATIONS Test Condition Symbol VIH VIL VOL II IOZ ICC Parameter High Level Input Voltage Low Level Input Voltage Low Level Output Voltage Input Leakage Current Output Leakage Current Quiescent Supply Current Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 Typ. Max. 1.5 3.15 4.2 -40 to 85°C -55 to 125°C Min. Min. Max. 1.5 3.15 4.2 Unit Max. 1.5 3.15 4.2 V 0.5 1.35 1.8 0.5 1.35 1.8 0.5 1.35 1.8 V 2.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=20 µA 0.0 0.1 0.1 0.1 6.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=5.2 mA 0.18 0.26 0.33 0.40 6.0 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VIH or VIL VO = VCC or GND ±0.5 ±5 ± 10 µA 6.0 VI = VCC or GND 1 10 20 µA V AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol tTHL tPLZ tPZL Parameter Output Transition Time Propagation Delay Time Propagation Delay Time http://www.hgsemi.net Value TA = 25°C VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 Min. RL = 1 K Ω RL = 1 K Ω 3 Typ. Max. 30 8 7 10 7 6 17 7 5 75 15 13 90 18 15 90 18 15 -40 to 85°C -55 to 125°C Min. Min. Max. 95 19 16 115 23 20 115 23 20 Unit Max. 110 22 19 135 27 23 135 27 23 ns ns ns 2015 JAN 74HC07 CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter CIN Input Capacitance COUT Output Capacitance Power Dissipation Capacitance (note 1) CPD Value TA = 25°C VCC (V) Min. -40 to 85°C -55 to 125°C Min. Min. Max. Unit Typ. Max. 5.0 5 10 5.0 3 pF 5.0 4 pF 10 Max. 10 pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate) TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) http://www.hgsemi.net 4 2015 JAN