BZX84B3V9

BZX84B Series Silicon Planar Zener Diodes Features SOT-23  Total power dissipation: 350mW max  Package designed for optimal automated board assembly  Small package size for high density applications  Wide zener reverse voltage range:2.4V to 75V Equivalent Circuit 1.Anode 2.NC 3.Cathode 3.Cathode 1.Anode 2.NC Absolute Maximum Ratings at TA = 25 ℃ Parameter Maximum Power Dissipation Thermal Resistance,Junction-to-Ambient Note1 Junction Temperature Storage Temperature Range Symbols Value Unit PD 350 mW RθJA 357 °C/W TJ 150 °C TSTG -65 to +150 °C Note: 1. Alumina = 0.4 X 0.3 X 0.024 in,99.5% Alumina www.pingjingsemi.com Revision：3.0 Jun-2021 1/4 BZX84B Series Silicon Planar Zener Diodes Electrical Characteristics at TA = 25 ℃ (Ta=25℃, unless otherwise noted, VF < 0.9 V at IF = 10 mA) Type Marking Zener Voltage Range Note1 Code Dynamic IZT VZT at IZT Impedance Reverse Current ZZT at IZT IR at VR Min.(V) Nom.(V) Max.(V) (mA) Max.(Ω) Max.(μA) (V) BZX84B2V4 CR 2.35 2.4 2.45 5 100 50 1 BZX84B2V7 CX 2.65 2.7 2.67 5 100 20 1 BZX84B3V0 CY 2.94 3 3.06 5 95 10 1 BZX84B3V3 CZ 3.23 3.3 3.37 5 95 5 1 BZX84B3V6 DA 3.53 3.6 3.67 5 90 5 1 BZX84B3V9 DB 3.82 3.9 3.98 5 90 3 1 BZX84B4V3 DC 4.21 4.3 4.39 5 90 3 1 BZX84B4V7 DD 4.61 4.7 4.79 5 80 3 2 BZX84B5V1 DE 5 5.1 5.2 5 60 2 2 BZX84B5V6 DF 5.49 5.6 5.71 5 40 1 2 BZX84B6V2 DH 6.08 6.2 6.32 5 10 3 4 BZX84B6V8 DJ 6.66 6.8 6.94 5 15 2 4 BZX84B7V5 DK 7.35 7.5 7.65 5 15 1 5 BZX84B8V2 DM 8.04 8.2 8.36 5 15 0.7 5 BZX84B9V1 DN 8.92 9.1 9.28 5 15 0.5 6 BZX84B10 DP 9.8 10 10.2 5 20 0.2 7 BZX84B11 DR 10.8 11 11.2 5 20 0.1 8 BZX84B12 DX 11.8 12 12.2 5 25 0.1 8 BZX84B13 DY 12.7 13 13.3 5 30 0.1 8 BZX84B15 DZ 14.7 15 15.3 5 30 0.05 10.5 BZX84B16 EA 15.7 16 16.3 5 40 0.05 11.2 BZX84B18 EB 17.6 18 18.4 5 45 0.05 12.6 BZX84B20 EC 19.6 20 20.4 5 55 0.05 14 BZX84B22 ED 21.6 22 22.4 5 55 0.05 15.4 BZX84B24 EE 23.5 24 24.5 5 70 0.05 16.8 BZX84B27 EF 26.5 27 27.5 2 80 0.05 18.9 BZX84B30 EH 29.4 30 30.6 2 80 0.05 21 BZX84B33 EJ 32.3 33 33.7 2 80 0.05 23.1 BZX84B36 EK 35.8 36 36.7 2 90 0.05 25.2 BZX84B39 EM 38.2 39 39.8 2 130 0.05 27.3 BZX84B43 EN 42.1 43 43.9 2 150 0.05 30.1 BZX84B47 EP 46.1 47 47.9 2 170 0.05 32.9 BZX84B51 ER 50 51 52 2 180 0.05 35.7 BZX84B56 EX 54.9 56 57.2 2 200 0.05 39.2 BZX84B62 EY 60.8 62 63.2 2 215 0.05 43.4 BZX84B68 EZ 66.6 68 69.4 2 240 0.05 47.6 BZX84B75 FA 73.5 75 76.5 2 255 0.05 52.5 Note: 1. VZT is tested with 20ms pulse. www.pingjingsemi.com Revision：3.0 Jun-2021 2/4 BZX84B Series Silicon Planar Zener Diodes Typical Characteristic Curves Temperature Coefficient (mV/℃) Temperature Coefficient (mV/℃) 8 7 6 5 4 3 2 1 0 -1 -2 -3 3 4 5 6 7 8 9 10 11 100 10 1 12 10 100 Nominal Value VZ (V) Zener voltage VZ (v) 220 Forward Current IF (mA) Power Dissipation PD (mW) 200 180 160 140 120 5V1 100 80 27V 60 40 20 0 Ambient Temperature TA (℃) www.pingjingsemi.com Revision：3.0 Jun-2021 500 700 900 1100 Forward Voltage VF (mV) 3/4 BZX84B Series Silicon Planar Zener Diodes Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping BZX84B Series SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：3.0 Jun-2021 4/4