SS54C

SS52C-SS510C SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 5.0 A Features ! Schottky Barrier Chip ! ! ! ! Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction B SMC/DO-214AB




















































































Dim Mechanical Data A ! Case: SMC/DO-214AB, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.21 grams (approx.) C D J H G E Min Max A 5.59 6.22 B 6.60 7.11 C 2.75 3.18 D 0.15 0.31 8.13 E 7.75 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SS52C SS53C SS54C SS55C SS56C SS58C SS510C Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A TA=25 C Maximum DC reverse current at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range VRRM VRMS VDC www.slkormicro.com 60 42 60 50 35 50 80 56 80 100 70 100 V V V 5.0 A IFSM 150.0 A IR CJ RθJA TJ , TSTG 1 40 28 40 30 21 30 I(AV) VF Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas 20 14 20 Unit 0.70 0.55 0.85 0.5 20 10 200 50.0 -65 to +125 -65 to +150 -65 to +150 V mA pF C/W C C FIG. 1- FORWARD CURRENT DERATING CURVE 5.0 4.0 Single Phase Half Wave 60Hz Resistive or inductive Load 3.0 2.0 SS52C-SS56C SS58C-SS510C 1.0 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES SS52C-SS510C FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 120 90 60 30 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 50 INSTANTANEOUS FORWARD CURRENT,AMPERES TJ=25 C 10.0 1 0.1 SS52C-SS54C SS55C-SS56C SS58C-SS510C 100 10 TJ=100 C 1 TJ=75 C 0.1 0.01 TJ=25 C 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE, pF FIG. 5-TYPICAL JUNCTION CAPACITANCE 2000 TJ=25 C 100 10 0.1 1.0 10 20 40 60 80 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 REVERSE VOLTAGE,VOLTS www.slkormicro.com 0 PERCENT OF PEAK REVERSE VOLTAGE,% 1.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 1000 100 t,PULSE DURATION,sec. 2 100