B0540WS

B0540WS Schottky Barrier Diode 2 Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance Also Available in Lead Free Version 1.Cathode 2.Anode 1 ■ Simplified outline(SOD-323) Absolute Maximum Ratings Ta = 25 Parameter Symbo Value Unit 40 V VR(RMS) 28 V Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM DC blocking voltage VR RMS reverse voltage reverse voltage (DC) Average rectified output current Io 0.5 A Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 5.5 A Power dissipation PD 200 mW Thermal resistance junction to ambient ℃/W RθJA 500 Junction temperature Tj 125 ℃ Storage temperature TSTG -55~+150 ℃ Voltage rate of change dv/dt 1000 V/μs Electrical Characteristics Ta = 25 Symbol Reverse breakdown voltage V(BR) Reverse current IR Forward voltage VF Capacitance between terminals CT www.slkormicro.com Test conditions IR=20uA Min Max 40 V VR =20V 10 VR =40V 20 IF=0.5A 0.51 IF =1.0A 0.62 VR=0,f=1MHz 170 1 Unit uA V pF B0540WS Forward Reverse Characteristics Characteristics 3000 1000 Ta=100 ℃ FORWARD CURRENT (uA) 00 =1 Ta ℃ 5℃ =2 Ta REVERSE CURRENT IR 100 IF (mA) 1000 10 1 0.1 100 10 Ta=25 ℃ 1 0 200 400 FORWARD VOLTAGE 600 VF 0.1 800 0 10 (mV) 20 30 REVERSE VOLTAGE VR 40 (V) Power Derating Curve Capacitance Characteristics 120 300 CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz (mW) 100 POWER DISSIPATION PD 80 60 40 200 100 20 0 0 5 10 15 REVERSE VOLTAGE www.slkormicro.com 20 VR 25 0 30 0 25 50 AMBIENT TEMPERATURE (V) 2 75 100 Ta (℃ ) 125 B0540WS ■ SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° mil ■ The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) www.slkormicro.com 3 8