MMBTSC945P(CR)

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation Ptot 200 mW Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Base Cutoff Current at VCB = 40 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 40 70 120 200 350 - 80 140 240 400 700 - ICBO - - 0.1 µA IEBO - - 0.1 µA V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.3 V fT - 300 - MHz COB - 2.5 - pF R O Y P L SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBTSC945 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01