MMBTA06

UMW R MMBTA06 UMW MMBTA06 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 1. BASE 2. EMITTER MARKING: 1GM 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 4 V Collector cut-off current ICBO VCB=80V, IE=0 0.1 µA Collector cut-off current ICES VCE=60V, IB=0 0.1 µA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 µA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC=100mA 100 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1.2 V Transition frequency www.umw-ic.com fT VCE=2V,IC=10mA, f=100MHz 1 100 MHz 友台半导体有限公司 UMW R UMW MMBTA06 SOT-23 Plastic-Encapsulate Transistors Static Characteristic 90 o Ta=100 C hFE 450uA 70 VCE=1V COMMON EMITTER Ta=25℃ 500uA 400uA 60 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 80 hFE —— IC 500 350uA 50 300uA 40 250uA 200uA 30 150uA 20 o Ta=25 C 100 100uA 10 IB=50uA 0 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE 8 VCE 9 20 1 10 VCEsat —— IC 1 10 100 COLLECTOR CURRENT (V) VBEsat —— 10 IC 500 (mA) IC β=10 0.1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 Ta=100℃ Ta=25℃ Ta=25℃ 1 Ta=100℃ 0.1 0.01 1 10 COLLECTOR CURRENT IC VBE —— 100 500 100 1 10 (mA) IC Cob / Cib 1000 500 100 COLLECTOR CURRENT —— IC (mA) VCB / VEB IC (mA) f=1MHz IE=0 / IC=0 o (pF) 0.1 0.0 C 1 100 CAPACITANCE T= a 25 ℃ T= a 10 0 oC COLLECTOR CURRENT 10 10 Cib Cob VCE=1V 0.3 0.6 0.9 BASE-EMITTER VOLTAGE fT —— 1 0.1 1.2 1 IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) 100 TRANSITION FREQUENCY 10 REVERSE VOLTAGE VBE(V) (MHz) 300 fT Ta=25 C —— V (V) Ta 0.3 0.2 0.1 VCE=2V o Ta=25 C 10 3 COLLECTOR CURRENT www.umw-ic.com 0.0 70 10 IC 0 (mA) 25 50 75 100 AMBIENT TEMPERATURE 2 125 Ta 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBTA06 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司