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WNT2F04-3/TR

WNT2F04-3/TR

  • 厂商:

    WILLSEMI(韦尔)

  • 封装:

    SOT-23

  • 描述:

    NPN,通用晶体管

  • 数据手册
  • 价格&库存
WNT2F04-3/TR 数据手册
WNT2F04 WNT2F04 NPN, General Purpose Transistors Http//:www.willsemi.com Descriptions The WNT2F04 is designed for general purpose amplifier applications. Standard products are Pb-free SOT-23 and Halogen-free (Top View) 3 Features 1AM  Complementary to WPT2F06  Collector Current: IC=0.2A 1 2 Marking :1AM 1: BASE 2: EMITTER 3: COLLECTOR Order information Device Package Shipping WNT2F04-3/TR SOT-23 3000/Reel&Tape Absolute maximum ratings Parameter Symbol Collector-emitter Voltage VCEO Collector-base Voltage VCBO Emitter-base Voltage VEBO Continues Collector Current IC Collector Power Dissipation PC Thermal Resistance From Junction To Ambient RΘJA Junction Temperature TJ Operating Temperature TOPR Storage Temperature Range Tstg Will Semiconductor Ltd. 1 Value 40 60 6 200 250 625 150 -40~+85 -55~+150 Unit V V V mA mW °C /W °C °C °C Jun, 2018 - Rev.1.4 WNT2F04 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Symbol BVCEO BVCBO BVEBO ICEX ICBO IEBO VCE(sat) VBE(sat) hFE Test Conditions IC=1mA, IB=0mA IC=10uA, IE=0mA IE=10uA, IC=0mA VCE=30V, VEB(OFF)=3V VCB=50V, IE=0A VEB=5V, IC=0A IC=50mA, IB=5mA IC=50mA, IB=5mA Min. 40 60 6 VCE=1V, IC=1mA 70 100 60 VCE=1V, IC=10mA VCE=1V, IC=50mA Collector capacitance CC Emitter capacitance CE IE=Ie=0;VCE=5V; f=1MHz IC=Ic=0;VBE=0.5V; f=1MHz Max. Unit V V V 50 nA 100 100 0.3 0.95 nA nA V V 300 4 pF 8 pF 5 dB IC=100mA; Noise figure VCE=5V; RS=1kΩ; F f=10Hz to15.7kHz Transition frequency fT Delay time td Rise time tr Storage time Fall time ts tf Will Semiconductor Ltd. VCE=20V, IC=10mA, f=100MHz VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA, IB1= IB2=1mA 2 300 MHz 35 ns 35 ns 200 50 ns ns Jun, 2018 - Rev.1.4 WNT2F04 Typical characteristics (Ta=25oC, unless otherwise noted) Will Semiconductor Ltd. 3 Jun, 2018 - Rev.1.4 WNT2F04 Package outline dimensions SOT-23 Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.500 0.100 A2 0.900 0.975 1.050 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 E1 2.250 2.400 2.550 e e1 0.950TYP 1.800 1.900 L 2.000 0.500REF L1 0.300 0.400 0.500 θ 0° 4° 8° Recommend PCB Layout (Unit: mm) 2.40 1.00 0.80 1.90 Will Semiconductor Ltd. 4 Jun, 2018 - Rev.1.4
WNT2F04-3/TR 价格&库存

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WNT2F04-3/TR
    •  国内价格
    • 50+0.08250
    • 500+0.07425
    • 5000+0.06875
    • 10000+0.06600
    • 30000+0.06325
    • 50000+0.06160

    库存:1425