PBSS4021SPN,115

PBSS4021SPN 20 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PBSS4021SPN Package Nexperia Name NPN/NPN complement SOT96-1 SO8 PBSS4021SN PNP/PNP complement PBSS4021SP 1.2 Features and benefits „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Battery-driven devices „ Power management „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit open base - - 20 V - - 7.5 A - - 15 A - 25 35 mΩ TR1; NPN low VCEsat transistor VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 5 A; IB = 0.5 A [1] PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor Table 2. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit open base - - −20 V - - −6.3 A TR2; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −5 A; IB = −0.5 A [1] [1] - - −15 A - 36 54 mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 emitter TR2 4 base TR2 5 collector TR2 Simplified outline 8 Graphic symbol 8 5 7 TR1 6 collector TR2 7 collector TR1 8 collector TR1 1 4 1 6 5 TR2 2 3 4 006aaa985 3. Ordering information Table 4. Ordering information Type number Package Name Description PBSS4021SPN SO8 Version plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Marking Table 5. PBSS4021SPN Product data sheet Marking codes Type number Marking code PBSS4021SPN 4021SPN All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 2 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit collector current - 7.5 A collector current - −6.3 A TR1 (NPN) IC TR2 (PNP) IC Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V ICM peak collector current single pulse; tp ≤ 1 ms - 15 A IB base current Ptot total power dissipation Tamb ≤ 25 °C - 1 A [1] - 0.73 W [2] - 1 W [3] - 1.7 W [1] - 0.86 W [2] - 1.4 W [3] - 2.3 W Per device total power dissipation Ptot PBSS4021SPN Product data sheet Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 3 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 006aac258 3.0 Ptot (W) (1) 2.0 (2) 1.0 (3) 0.0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 170 K/W [2] - - 125 K/W [3] - - 75 K/W - - 40 K/W [1] - - 145 K/W [2] - - 90 K/W [3] - - 55 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) PBSS4021SPN Product data sheet thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 4 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 006aac259 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac260 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 5 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 006aac261 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 6 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR1; NPN low VCEsat transistor ICBO collector-base cut-off current VCB = 20 V; IE = 0 A - - 100 nA VCB = 20 V; IE = 0 A; Tj = 150 °C - - 50 μA ICES collector-emitter cut-off current VCE = 16 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V [1] IC = 500 mA 300 550 - IC = 1 A 300 550 - IC = 2 A 300 500 - IC = 4 A 250 450 - 100 200 - IC = 1 A; IB = 50 mA - 30 45 mV IC = 1 A; IB = 10 mA - 40 60 mV IC = 2 A; IB = 40 mA - 60 90 mV IC = 4 A; IB = 200 mA - 100 150 mV IC = 4 A; IB = 40 mA - 120 180 mV - 185 275 mV - 25 35 mΩ - 0.87 1 V - 1.04 1.2 V - 0.76 0.85 V - 40 - ns IC = 8 A VCEsat collector-emitter saturation voltage [1] IC = 7.5 A; IB = 375 mA RCEsat collector-emitter IC = 5 A; IB = 500 mA saturation resistance [1] VBEsat base-emitter saturation voltage [1] IC = 1 A; IB = 100 mA IC = 4 A; IB = 400 mA PBSS4021SPN Product data sheet VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A td delay time VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; IBoff = −0.05 A [1] tr rise time - 40 - ns ton turn-on time - 80 - ns ts storage time - 650 - ns tf fall time - 75 - ns toff turn-off time - 725 - ns fT transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz - 115 - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 85 - pF All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 7 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB = −20 V; IE = 0 A - - −100 nA VCB = −20 V; IE = 0 A; Tj = 150 °C - - −50 μA TR2; PNP low VCEsat transistor ICBO collector-base cut-off current ICES collector-emitter cut-off current VCE = −16 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V IC = −500 mA 250 400 - IC = −1 A 250 400 - IC = −2 A 200 350 - IC = −4 A 150 300 - 80 200 - IC = −1 A; IB = −50 mA - −45 −68 mV IC = −1 A; IB = −10 mA - −70 −115 mV IC = −2 A; IB = −40 mA - −100 −150 mV IC = −4 A; IB = −200 mA - −150 −225 mV IC = −4 A; IB = −40 mA - −250 −375 mV - −235 −350 mV - 36 54 mΩ - −0.85 −1 V - −1 −1.2 V - −0.76 −0.85 V - 40 - ns - 55 - ns [1] IC = −7 A VCEsat collector-emitter saturation voltage [1] IC = −6.5 A; IB = −325 mA RCEsat collector-emitter IC = −5 A; IB = −500 mA saturation resistance [1] VBEsat base-emitter saturation voltage [1] IC = −1 A; IB = −100 mA IC = −4 A; IB = −400 mA VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A td delay time tr rise time VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A ton turn-on time - 95 - ns ts storage time - 340 - ns tf fall time - 85 - ns toff turn-off time - 425 - ns fT transition frequency - 105 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 95 - pF [1] PBSS4021SPN Product data sheet VCE = −10 V; IC = −100 mA; f = 100 MHz [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 8 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 006aac262 800 (1) hFE 006aac263 16.0 IB (mA) = 70 IC (A) 600 63 56 49 12.0 42 (2) 35 28 400 21 8.0 (3) 14 200 4.0 0 10−1 1 10 102 103 7 0.0 0.0 104 105 IC (mA) 1.0 2.0 3.0 4.0 5.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 6. 006aac264 1.2 VBE (V) TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values 006aac265 1.4 VBEsat (V) 0.8 1.0 (1) (1) (2) (2) 0.4 0.6 (3) (3) 0.0 10−1 1 10 102 103 0.2 10−1 104 105 IC (mA) 1 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values PBSS4021SPN Product data sheet Fig 8. 10 102 103 104 105 IC (mA) TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 9 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 006aac266 1 006aac267 1 VCEsat (V) VCEsat (V) 10−1 10−1 (2) (3) (1) (1) 10−2 10−2 (2) (3) 10−3 10−1 1 102 10 103 104 105 IC (mA) 10−3 10−1 1 10 103 104 105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. 102 TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aac268 102 Fig 10. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aac269 103 RCEsat (Ω) RCEsat (Ω) 102 10 (1) 10 1 (2) 1 10−1 (1) (2) 10−2 10−1 (3) 1 10 102 (3) 10−1 103 104 IC (mA) 10−2 10−1 1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. TR1 (NPN): Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet 102 103 104 105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C PBSS4021SPN 10 Fig 12. TR1 (NPN): Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 10 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 006aac270 600 IB (mA) = −200 IC (A) (1) hFE 006aac271 −16.0 −160 −12.0 −120 (2) 400 −180 −140 −100 −80 −60 −8.0 −40 (3) 200 −20 −4.0 0 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) 0.0 0.0 VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 13. TR2 (PNP): DC current gain as a function of collector current; typical values 006aac272 −1.4 VBE (V) Fig 14. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aac273 −1.4 VBEsat (V) −1.0 −1.0 (1) (1) (2) −0.6 −0.6 (2) (3) (3) −0.2 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) VCE = −2 V −0.2 −10−1 −1 −10 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 15. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values Product data sheet −103 −104 −105 IC (mA) IC/IB = 20 (1) Tamb = −55 °C PBSS4021SPN −102 Fig 16. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 11 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 006aac274 −1 VCEsat (V) 006aac275 −1 VCEsat (V) −10−1 −10−1 (1) (1) (2) (2) (3) −10−2 −10−2 (3) −10−3 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) −10−3 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 17. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aac276 103 Fig 18. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aac277 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) 1 (1) (2) 10−1 1 (2) 10−1 (3) (3) 10−2 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) 10−2 −10−1 −1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 19. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −102 −103 −104 −105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C PBSS4021SPN −10 Fig 20. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 12 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 21. TR1 (NPN): BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; IBoff = −0.05 A Fig 22. TR1 (NPN): Test circuit for switching times PBSS4021SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 13 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 23. TR2 (PNP): BISS transistor switching time definition VBB RB oscilloscope VCC RC Vo (probe) 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A Fig 24. TR2 (PNP): Test circuit for switching times PBSS4021SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 14 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 9. Package outline 5.0 4.8 1.75 1.0 0.4 6.2 5.8 4.0 3.8 pin 1 index 1.27 0.49 0.36 Dimensions in mm 0.25 0.19 03-02-18 Fig 25. Package outline SOT96-1 (SO8) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS4021SPN [1] PBSS4021SPN Product data sheet Package SOT96-1 Description 8 mm pitch, 12 mm tape and reel Packing quantity 1000 2500 -115 -118 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 15 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 11. Soldering 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 26. Reflow soldering footprint SOT96-1 (SO8) 1.20 (2×) 0.60 (6×) enlarged solder land 0.3 (2×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands occupied area solder resist placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 27. Wave soldering footprint SOT96-1 (SO8) PBSS4021SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 16 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4021SPN v.2 20101013 Product data sheet - PBSS4021SPN v.1 Modifications: PBSS4021SPN v.1 PBSS4021SPN Product data sheet • Figure 1 “Per device: Power derating curves”: updated. 20100714 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 - © Nexperia B.V. 2017. All rights reserved 17 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 13.2 Definitions Draft — The document is a draft version only. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. PBSS4021SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 18 of 20 PBSS4021SPN Nexperia 20 V NPN/PNP low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PBSS4021SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 19 of 20 Nexperia PBSS4021SPN 20 V NPN/PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Packing information . . . . . . . . . . . . . . . . . . . . 15 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 13 October 2010