KIA2806A

KIA 160A，60V N-CHANNEL MOSFET 2806A SEMICONDUCTORS 1. Features n RDS(on)=3.5mΩ（typ.）@ VGS=10V n 100% avalanche tested n Reliable and rugged n Lead free and green device available（RoHS Compliant） 2. Applications n Switching application n Power management for inverter systems n UPS 3.Symbol 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.5 Sep. 2017 KIA 160A，60V N-CHANNEL MOSFET 2806A SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol (TA=25°C,unless otherwise noted) Rating Units TO-220/263 TO-247/3P Drain-source voltage VDSS 60 V Gate-source voltage VGSS +25 V TJ 175 ºC TSTG -55 to175 ºC IS 160 A 160 A 105 A Maximum junction temperature Storage temperature range Diode continuous forward current Continuous drain current TC=25ºC TC=25ºC TC=100ºC ID3 Pulse drain current* TC=25ºC IDM4 580 A Avalanche energy,single pulsed L=0.5mH EAS5 400 mJ Maximum power dissipation TC=25 ºC TC=100ºC PD 185 277 92.5 138.5 W 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance,Junction-ambient RθJA 62.5 ºC/W Thermal resistance,Junction-case RθJC 0.81 ºC/W 2 of 6 Rev 1.5 Sep.2017 160A，60V N-CHANNEL MOSFET KIA 2806A SEMICONDUCTORS 6. Electrical characteristics Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage (TA=25°C,unless otherwise noted) Min Typ Max Units Symbol Test Conditions BVDSS VGS=0V,IDS=250μA 60 - - VDS=48V, VGS=0V - - 1 - - 10 IDSS TJ=85°C V μA VGS(th) VDS=VGS, ID=250μA 2.0 3.0 4.0 V IGSS VGS=+25V, VDS=0V - - +100 nA RDS(on)1 VGS=10V,ID=60A - 3.5 4.5 mΩ Rg VDS=0V, VGS=0V,f=1MHz - 0.7 - Ω VSD1 ISD=60A, VGS=0V - 0.8 1.2 V Reverse recovery time2 trr IF=60A ,VDD=50V - 30 - nS Reverse recovery charge2 Qrr dlSD/dt=100A/μs - 50 - nC Input capacitance2 Ciss - 4376 - Output capacitance2 Coss - 857 - Reverse transfer capacitance2 Crss - 334 - Turn-on delay time2 td(on) - 28 - Gate leakage current Drain-source on-state resistance Gate resistance Diode forward voltage Rise time2 Turn-off delay time2 Fall time2 f=1MHz tr VDD=30V, IDS=60A, - 18 - td(off) RG=25Ω,VGS=10V - 42 - - 54 - - 130 - - 24 -- - 47 -- tf Total gate charge2 Qg Gate-source charge2 Qgs Gate-drain charge VDS=25V,VGS=0V, 2 VDS=48V, VGS=10V IDS=60A Qgd Note:1:Pulse test;pulse width