GS4606

Gem micro GS4606 semiconductor Inc. Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS 30V ID PRODUCT SUMMARY (P-Channel) RDS(on) (mΩ) Max VDSS 28 @ VGS = 10 V,ID=6.5A 6.5A -30V 42 @ VGS = 4.5V,ID=5.0A ID RDS(on) (mΩ) Max 42 @ VGS = -10V,ID=-6A -6.0A 70 @ VGS = -4.5V,ID=-5A Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Surface mount Package • Ordering information:GS4606 (Lead(Pb)-free and halogen-free) 8 1 2 3 7 6 5 Pin 1: Source N Pin 2: Gate N Pin 3: Source P Pin 4: Gate P Pin 5 / 6: Drain P Pin 7 / 8: Drain N 4 SOP-8 Absolute Maximum Ratings (TA=25℃, unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID Drain Current a 6.5 -6.0 A IDM Drain Current (Pulsed) b 28 -26 A 2.5 -2.3 A PD Drain-Source Diode Forward Current a Total Power Dissipation @T =25℃ a 2 2 W Tstg Storage Temperature Range a -55 to +150 -55 to +150 ℃ Tj Junction Temperature 150 150 ℃ Thermal Resistance Junction to Ambient a 62.5 62.5 ℃/W Is RθJA A Note: a: Surface Mounted on FR4 Board , t ≤ 5sec . b: Pulse width limited by maximum junction temperature. c: UIS tested and pulse width limited by maximum junction temperature 150℃ (initial temperature Tj=25℃). DS-GS4606-REV07 Page 1 of 9 Gem micro GS4606 semiconductor Inc. N-Channel Electrical Characteristics(TA=25℃, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit • Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - -1 µA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA VDS=VGS, ID=250µA 1.0 - 3.0 V VGS=10V, ID= 6.5A - 22 28 VGS=4.5V, ID= 5.0A - 34 42 VDS=5V, ID= 5.0A - 6.0 - - 398 - - 67 - - 61 - - 7.4 - - 1.7 - d • On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance • Dynamic Characteristics mΩ S e Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHz pF e • Switching Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.3 - td(on) Turn-on Delay Time - 8.0 - tr td(off) tf VDS=10V, ID=1A, VGS=10V Turn-on Rise Time VDD= 15V, RL=15Ω, ID=1A, - 11.2 - Turn-off Delay Time VGS=10V, RGEN=6Ω - 17.2 - - 7.54 - - - 1.3 Turn-off Fall Time nC nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=2.5A Note: d: Pulse Test : Pulse Width < 300μs, Duty Cycle < 2% e: Guaranteed by design, not subject to production testing. VDD VDS 90% RL D VOUT Vin VGS 10% VGS RGEN G S td(on) tr Switching Test Circuit and Switching Waveforms DS-GS4606-REV07 Page 2 of 9 td(off) tf V Gem micro GS4606 semiconductor Inc. P-Channel Electrical Characteristics (TA=25℃, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 µA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.0 - -3.0 V 33 42 Drain-Source On-State Resistance VGS=-10V, ID=-6.0A - RDS(on) VGS=-4.5V, ID=-5.0A - 56 70 gfs Forward Transconductance VDS=-10V, ID=-6.0A - 12.7 - - 930 - - 121 - - 102 - - 20 - - 4.1 - • Off Characteristics d • On Characteristics • Dynamic Characteristics mΩ S e Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHz pF e • Switching Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 2.6 - td(on) Turn-on Delay Time - 9.5 - tr Turn-on Rise Time - 5.4 - td(off) Turn-off Delay Time - 42.5 - tf Turn-off Fall Time - 13.6 - - - -1.2 VDS=-15V, ID=-3A, VGS=-10V VDD=-15V, RL=5Ω, ID=-3A, VGS=-10V, RGEN=6Ω nC nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-2.3A Note: d: Pulse width limited by maximum junction temperature. e: Guaranteed by design , not subject to production testing . -VDD VDS 90% RL D VOUT Vin VGS 10% VGS RGEN G S td(on) tr Switching Test Circuit and Switching Waveforms DS-GS4606-REV07 Page 3 of 9 td(off) tf V Gem micro GS4606 semiconductor Inc. Characteristics Curve(N-Channel) Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics 10V VDS=5V 4.5V ID – Drain Current(A) ID – Drain Current(A) 6V 4V 3.5V 125℃ VGS=3V 25℃ Figure 3: On-Resistance vs. Drain Current and VGS Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=10V VGS=10V ID=6A VGS=4.5V ID=5A ID – Drain Current(A) TJ – Junction Temperature(℃) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 3: On-Resistance vs. Drain Current and VGS ID=6A IS - Source Current (A) RDS(on) – On Resistance(mΩ) Normalized On-Resistance VGS – Gate Source Voltage(V) RDS(on) – On Resistance(mΩ) VDS – Drain Source Voltage(V) 125℃ 125℃ 25℃ 25℃ VGS – Gate Source Voltage(V) DS-GS4606-REV07 VSD - Source - Drain Voltage (V) Page 4 of 9 Gem micro GS4606 semiconductor Inc. Characteristics Curve(N-Channel) Figure 8: Capacitance Characteristics VDS=15V ID=6A C - Capacitance (pF) VGS - Gate - source Voltage (V) Figure 7: Gate-Charge Characteristics Ciss Coss Crss QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Figure 9: Gate-Charge Characteristics Figure 10: Gate-Charge Characteristics RDS(on) limited 100μs Power (W) ID – Drain Current(Amps) TA=25℃ 10μs 1ms 10ms TJ(Max)=150℃ TA=25℃ DC 10s VDS - Drain - Source Voltage (V) Pulse Width (s) ZθJA - Normalized Transient Thermal Resistance Figure 11: Normalized Maximum Transient Thermal Impedance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ.PK=TA+PDM.ZθJA.RθJA RθJA=90℃/W PD single pulse Ton T Pulse Width (s) DS-GS4606-REV07 Page 5 of 9 Gem micro GS4606 semiconductor Inc. Characteristics Curve(P-Channel) Figure 12: On-Region Characteristics -10V Figure 13: Transfer Characteristics VDS=-5V -ID – Drain Current(A) -4V VGS=-3V -ID – Drain Current(A) -5V -8V 125℃ 25℃ Figure 14: On-Resistance vs. Drain Current and VGS Figure 15: On-Resistance vs. Junction Temperature Normalized On-Resistance -VGS – Gate Source Voltage(V) RDS(on) – On Resistance(mΩ) -VDS – Drain Source Voltage(V) VGS=-4.5V VGS=-10V VGS=-10V ID=-5.5A VGS=-4.5V ID=-4.5A -ID – Drain Current(A) TJ – Junction Temperature(℃) Figure 16: On-Resistance vs. Gate-Source Voltage Figure 17: On-Resistance vs. Drain Current and VGS -IS - Source Current (A) RDS(on) – On Resistance(mΩ) ID=6A 125℃ 125℃ 25℃ 25℃ -VGS – Gate Source Voltage(V) DS-GS4606-REV07 -VSD - Source - Drain Voltage (V) Page 6 of 9 Gem micro GS4606 semiconductor Inc. Characteristics Curve(P-Channel) Figure 19: Capacitance Characteristics C - Capacitance (pF) -VGS - Gate - source Voltage (V) Figure 18: Gate-Charge Characteristics QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Figure 20: Maximum Forward Biased Safe Operating Area Figure 21: Single Pulse Power Rating Junction-to-Ambient RDS(on) limited 100μs Power(W) -ID – Drain Current(A) TA=25℃ 10μs 1ms 10ms TJ(Max)=150℃ 10s DC TA=25℃ Pulse Width (sec) -VGS – Gate Source Voltage(V) ZθJA - Normalized Transient Thermal Resistance Figure 22: Normalized Maximum Transient Thermal Impedance D=Ton/T TJ.PK=TA+PDM.ZθJA.RθJA RθJA=90℃/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD single pulse Ton T Pulse Width (sec) DS-GS4606-REV07 Page 7 of 9 Gem micro GS4606 semiconductor Inc. SOP-8 PACKAGE OUTLINE DIMENSIONS Dimensions In Millimeters（MM） Symbol Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.170 0.250 0.006 0.010 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 1.270 0.016 e L θ DS-GS4606-REV07 Dimensions In Inches（MIL） 1.270(BSC) 0.400 0 0 0.050(BSC) 8 0 Page 8 of 9 0 0 0.050 80 Gem micro semiconductor Inc. GS4606 Notice 1. Specification of the products displayed herein is subject to change without notice. Continuous development may necessitate changes in technical data without notice. GEMMICRO or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. 2. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DS-GS4606-REV07 Page 9 of 9