PBR951

PBR951 NPN silicon epitaxial transistor DESCRIPTION The PBR951 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. MARKING:W2W FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain JS MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25
C) MI VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V IC mA 100 PT 200 mW Junction Temperature Tj 150
C Storage Temperature Tstg to +150
C Collector Current Total Power Dissipation O CR Collector to Base Voltage 65 Se ELECTRICAL CHARACTERISTICS (TA = 25
C) ICBO Emitter Cutoff Current IEBO DC Current Gain hFE* MIN. TYP. 50 120 UNIT 1.0
A VCB = 10 V, IE = 0 1.0
A VEB = 1.0 V, IC = 0 7 Feed-Back Capacitance Cre** 0.55
S21e
2 11.5 NF 1.1 VCE = 10 V, IC = 20 mA GHz 1.0 2.0 Pulse Measurement PW  350
s, Duty Cycle  2 % pF VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz t uc fT 300 TEST CONDITIONS nd Gain Bandwidth Product Noise Figure MAX. co Collector Cutoff Current Insertion Power Gain * SYMBOL mi CHARACTERISTIC dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz or ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. www.jsmsemi.com 第１／３页 PBR951 NPN silicon epitaxial transistor TYPICAL CHARACTERISTICS (TA = 25
C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Cre-Feed-back Capacitance-pF 200 100 JS PT-Total Power Dissipation-mW 2 Free Air 50 0 100 f = 1.0 MHz 1 0.5 0.3 0 150 0.5 MI CR INSERTION GAIN vs. COLLECTOR CURRENT mi |S21e|2-Insertion Gain-dB Se hFE-DC Current Gain O 50 20 5 10 50 5 VCE = 10 V f = 1.0 GHz 0 0.5 5 10 50 70 nd 3.0 2.0 1.0 0.5 0.3 20 |S21e|2 10 0.2 VCE = 10 V 30 Gmax or Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB 5.0 t uc INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY 10 5.0 10 1 IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.5 1.0 30 10 co 1 20 15 IC-Collector Current-mA fT-Gain Bandwidth Product-MHz 10 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V 0 5 VCB-Collector to Base Voltage-V 100 0.1 2 TA-Ambient Temperature-°C 200 10 0.5 1 0 IC-Collector Current-mA VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz www.jsmsemi.com 第２／３页 PBR951 NPN silicon epitaxial transistor NOISE FIGURE vs. COLLECTOR CURRENT |S21e|2-Insertion Gain-dB NF-Noise Figure-dB 6 5 4 3 2 1 5 10 15 12 6 3 0 50 70 MI 0 0.5 JS 1 18 VCE = 10 V f = 1.0 GHz NF-Noise Figure-dB 7 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S21e| 3 2 NF 1 0 IC-Collector Current-mA 2 4 6 8 10 VCE-Collector to Emitter Voltage-V O CR Se mi nd co or t uc www.jsmsemi.com 第３／３页