KIA7N80HF

KIA 7A，800V N-CHANNEL MOSFET 7N80H SEMICONDUCTORS 1.Description This Power MOSFET is produced using SL semi`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high effciency switched mode power supplies, active power factor correction based on half bridge topology. 2. Features n RDS(on)=1.4Ω @ VGS=10V n Low gate charge ( typical 27nC) n High ruggedness n Fast switching n 100% avalanche tested n Improved dv/dt capability 3. Pin configuration 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.1 JAN 2014 KIA 7A，800V N-CHANNEL MOSFET 7N80H SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous VDSS VGSS TC=25ºC TC=100ºC ID Drain current pulsed (note1) IDM Repetitive (note1) EAR Avalanche energy Single pulse (note2) EAS Peak diode recovery dv/dt (note3) dv/dt TC=25 ºC Total power dissipation PD derate above 25 ºC Operating and storage temperature range TJ, TSTG Maximum lead temperature for soldering TL purposes, 1/8〞from case for 5 seconds * Drain current limited by maximum junction temperature (TC= 25 ºC , unless otherwise noted) Rating Units 7N80HP 7N80HF V 800 V +30 7.0 7.0* A 4.2 4.2* A A 28 28* mJ 16.7 mJ 650 V/ns 4.5 W 167 56 1.33 0.44 W/ºC -55~+150 ºC 300 ºC 5. Thermal characteristics Parameter Symbol Rating 7N80HP 7N80HF 62.5 Unit Thermal resistance,Junction-ambient RthJA Thermal resistance,case-to-sink typ. RthCS 0.5 - ºC/W Thermal resistance,Junction-case RthJC 0.75 2.25 ºC/W 2 of 6 Rev 1.1 JAN 2014 ºC/W KIA 7A，800V N-CHANNEL MOSFET 7N80H SEMICONDUCTORS 6. Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage BVDSS Zero gate voltage drain current Gate-body leakage current (TC=25°C,unless otherwise noted) Conditions Min Typ Max Unit Symbol IDSS Forward Reverse IGSS Breakdown voltage temperature coefficient △BVDSS/△TJ VGS=0V,ID=250μA VDS=800V ,VGS=0V VDS=640V ,TC=125ºC VGS=30V,VDS=0V VGS=-30V,VDS=0V ID=250μA,referenced to 25°C 800 - - 10 100 100 -100 V μA μA nA nA - 1 - V/°C VDS=VGS, ID=250μA VGS=10V,ID=3.5A 3.0 - 1.4 5.0 1.9 V Ω VDS=25V,VGS=0V, f=1MHz - 1300 120 10 - pF pF pF - 40 100 50 60 27 8 11 - ns ns ns ns nC nC nC - 650 1.5 7.0 28 - V A A ns - 7.0 - μC On characteristics Gate threshold voltage VGS(th) Static drain-source on-resistance RDS(on) Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching characteristics Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Drain-source diode characteristics and maximum ratings Drain-source diode forward voltage VSD Continuous drain-source current ISD Pulsed drain-source current ISM Reverse recovery time trr Reverse recovery charge Qrr VDD=400V,ID=7A, RG=25Ω (note4,5) VDS=640V,ID=7A , VGS=10V (note4,5) VGS=0V,ISD=7A VGS=0V,ISD=7A dlF/dt=100A/μs (note4) Note:1.repetitive rating:pulse width limited by maximum junction temperature 2.L=25mH,IAS=7A,VDD=50V,RG=25Ω,staring TJ=25ºC 3.ISD