SI2306A

UMW R UMW SI2306A N-Channel 30-V (D-S) MOSFET ■ Features SOT–23 ● VDS (V) = 30V ● RDS(ON) ＜ 35mΩ (VGS =-10V), ID=4A ● RDS(ON) ＜ 50mΩ(VGS =-4.5V),ID=3.5A 1. GATE 2. SOURCE 3. DRAIN D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Tj=150℃ *1 Ta=25℃ ID Ta=70℃ Pulsed Drain Current Power Dissipation IDM *1 Thermal Resistance.Junction- to-Ambient Ta=25℃ PD Ta=70℃ t ≤ 5 sec RthJA Steady State Junction Temperature Storage Temperature Range Unit V 4 3.5 A 16 1.25 0.8 100 130 TJ 150 Tstg -55 to 150 W ℃/W ℃ *1.Surface Mounted on FR4 Board,.t ≤ 5 sec www.umw-ic.com 1 友台半导体有限公司 UMW R UMW SI2306A N-Channel 30-V (D-S) MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Drain-source breakdown voltage Testconditions V(BR)DSS VGS = 0 V, ID = 250 uA Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) VDS = VGS, ID = 250 uA VDS = 0 V, VGS = Min Typ Max 30 1 3 20 V 100 VDS = 30V, VGS = 0 V 0.5 VDS =30V, VGS = 0 V, TJ = 55 10 VDS 4.5 V, VGS = 10 V 6 VDS 4.5 V, VGS = 4.5 V 4 Unit V nA uA A VGS = 10 V, ID = 4 A 35 VGS =4.5 V, ID =3.5A 50 Forward transconductance gfs VDS =4.5 V, ID = 3.5 A Diode forward voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V gate charge * Qg VDS = 15V ,VGS =5V , ID= 3.5 A 4.2 7 nC Total gate charge * Qgt 8.5 20 Gate-source charge * Qgs Gate-drain charge * Qgd Gate Resistance Rg Input capacitance * Ciss Output capacitance * Coss Reverse transfer capacitance * Crss Turn-on time * Pulse test: PW VDS = 15V ,VGS = 10 V , ID= 3.5 A www.umw-ic.com nC 1.9 1.35 0.5 2.4 Ω 555 VDS = 15V ,VGS = 0 , f = 1 MHz pF 120 60 9 20 tr 7.5 18 17 35 5.2 12 VDD = 15V , RL = 15 Ω , ID = 1A , VGEN =-10V , RG = 6 Ω tf 300 u s duty cycle S td(on) td(off) Turn-off time 6.9 mΩ ns 2%. 3 友台半导体有限公司 UMW R UMW SI2306A N-Channel 30-V (D-S) MOSFET ■ Typical Characteristics Ou t p u t Ch ar ac t er i s t i c s Tr an s f er Ch ar ac t er i s t i c s 16 16 V GS = 10 thru 5 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 4 V 8 4 8 T C = 125 C 4 25 C - 55 C 3 thru 1 V 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 2 3 4 5 VGS - Gate-to-Source Voltage (V) Capacitance 800 C - Capacitance (pF) r DS(on) - On-Resistance ( ) 700 0.4 0.3 0.2 500 400 300 C oss 200 V GS = 4.5 V 0.1 C iss 600 V GS = 10 V 100 0.0 C rss 0 0 4 8 12 0 16 6 ID - Drain Current (A) r DS(on) - On-Resistance ( ) (Normalized) V GS - Gate-to-Source Voltage (V) 1.6 V DS = 15V I D = 3.5 A 8 6 4 2 0 0 2 4 6 8 1.4 24 30 On-Resistance vs. Junction T emperature V GS = 10 V I D = 3.5 A 1.2 1.0 0.8 0.6 - 50 10 Qg - Total Gate Charge (nC) www.umw-ic.com 18 VDS - Drain-to-Source Voltage (V) Gate Charge 10 12 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) 3 友台半导体有限公司 UMW R UMW SI2306A N-Channel 30-V (D-S) MOSFET ■ Typical Characterisitics Source-Drain Diode Forward Voltage ) T J = 150 C T J = 25 C 0.3 0.2 I D = 3.5 A 0.1 0.0 1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Single Pulse Power Threshold V oltage 0.4 12 I D = 250 A 0.2 10 - 0.0 8 Power (W) V GS(th) Variance (V) Voltage 0.4 r DS(on) - On-Resistance ( I S - Source Current (A) On-Resistance vs. Gate-to-Source 0.5 10 - 0.2 6 - 0.4 4 - 0.6 2 - 0.8 - 50 T A = 25 C 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature ( C) 10 100 500 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2.Per Unit Base = R thJA = 130 C/W 0.02 3. TJM - TA = PDM Z thJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 10 100 500 Square Wave Pulse Duration (sec) www.umw-ic.com 4 友台半导体有限公司 UMW R UMW SI2306A N-Channel 30-V (D-S) MOSFET Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° Marking A06 U Ordering information Order code Package Baseqty Deliverymode UMW SI2306A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司