BZT52C20

SOD-123 Plastic-Encapsulate Diodes BZT52C2V4 - BZT52C75 SILICON PLANAR ZENER DIODES Features • Ideally suited for automated assembly processes • Total power dissipation: max. 500 mW PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Power Dissipation Ptot 500 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg - 65 to + 150 ℃ Symbol Max. Unit RthJA 250 ℃/W VF 0.9 V Characteristics at Ta = 25℃ Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Page 1 f 4 REV01: 09/2011 ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise specified Type Type Number Code Zener Voltage Range (Note 2) Maximum Typical Maximum Zener Impedance Reverse Temperature (Note 3) Current Coefficent (Note 2) VZ@IZT Nom(V) Min( Min(V) IZT (V) ZZT@IZT mA ZZK@IZK Ω @IZTC Test Current IZTC IZK IR VR mV/°C mA uA V Min Max mA BZT52C2V4 4 WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 1 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 1 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 1 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 1 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 1 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1 0.1 11.2 10.4 14.0 5 BZT52C18 1 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 2 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 2 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 2 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0 0.1 18.9 21.4 25.3 2 BZT52C30 3 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 3 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 350 0 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 0 41 0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 4 WU 43 40.0 46.0 5 100 700 1.0 0.1 32 10.0 12.0 5 Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 2.. Short duration test pulse used to minimize self-heating effect 3.. f= 1kHZ Page 2 f 4 REV01: 09/2011 Typical Characteristics 100 Ta =25℃ PD =350mW Pulsed 1 0.5 1 2 3 5 4 6 7 8 9 10 11 10 15 25 30 43 36 39 45 50 Pulsed FOR BZT52CXXX SERIES 10 IR, LEAKAGE CURRENT (uA) 30 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ 0 4 8 12 16 20 24 28 32 36 40 1E-4 44 0 5 10 15 20 25 30 35 40 45 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 1 10 VZ, NOMINAL ZENER VOLTAGE (V) IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS C, CAPACITANCE (pF) 40 Typical Leakage Current 100 VZ, NOMINAL ZENER VOLTAGE (V) Page 3 f 4 35 TYPICAL Ta VALUES 35 1 33 27 30 22 20 VZ, ZENER VOLTAGE (V) Temperature Coefficients 40 θVZ, TEMPERATURE COEFFICIENT (mV/℃) 24 1 VZ, ZENER VOLTAGE (V) -5 20 18 10 16 10 9.1 8.2 7.5 6.2 6.8 5.6 4.7 2.4 5.1 10 PD =350mW 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 15 Ta =25℃ IZ, ZENER CURRENT (mA) Zener Characteristics(11 V to 43 V) Zener Characteristics(VZ Up to 10 V) 100 100 f=1kHz 100 IZ=5mA 10 1 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) REV01: 09/2011 PACKAGE OUTLINE Plastic surface mounted package; 2 leads Page 4 f 4 SOD-123 REV01: 09/2011