PSMN2R1-40PLQ

PSMN2R1-40PL N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • • • High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications • • • • Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 150 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 293 W VGS = 10 V; ID = 25 A; Tj = 25 °C; - 1.8 2.2 mΩ [1] Static characteristics RDSon drain-source on-state resistance Fig. 11 Dynamic characteristics QG(tot) QGD total gate charge VGS = 10 V; ID = 25 A; VDS = 32 V; - 168.9 - nC gate-drain charge Fig. 13; Fig. 14 - 29.6 - nC ID = 150 A; Vsup ≤ 40 V; RGS = 50 Ω; - - 490.3 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 Continuous current is limited by package. PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package PSMN2R1-40PL Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code PSMN2R1-40PL PSMN2R1-40PL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS = 20 kΩ - 40 V VGS gate-source voltage -20 20 V ID drain current IDM peak drain current PSMN2R1-40PL Product data sheet Tmb = 100 °C; VGS = 10 V; Fig. 1 [1] - 150 A Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - 150 A - 1075 A Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 2 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 293 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 150 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1075 A ID = 150 A; Vsup ≤ 40 V; RGS = 50 Ω; - 490.3 mJ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] Continuous current is limited by package. 003aak797 300 ID (A) 250 03aa16 120 Pder (%) 80 200 (1) 150 40 100 50 0 0 30 60 90 120 150 Tj (°C) (1) Capped at 150A due to package Fig. 1. Continuous drain current as a function of mounting base temperature PSMN2R1-40PL Product data sheet 0 180 Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 1 February 2013 50 © Nexperia B.V. 2017. All rights reserved 3 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 IAL (A) 003aak798 103 (1) 102 (2) 10 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time ID (A) 003aak799 104 103 Limit RDSon = VDS / ID tp = 10 us 102 100 us DC 10 1 ms 10 ms 100 ms 1 10-1 10-1 Fig. 4. 1 10 VDS (V) 102 Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 0.44 0.51 K/W Rth(j-a) thermal resistance from junction to ambient vertical in still air - 60 - K/W PSMN2R1-40PL Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 4 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 003aah378 1 Z th(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 10 -2 10 -3 P single shot δ= t tp 10-6 Fig. 5. 10-5 10-4 10-3 10-2 tp T T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.4 1.7 2.1 V - - 2.45 V 0.5 - - V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.15 1 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; - 1.8 2.2 mΩ - 2.2 2.6 mΩ - - 4.1 mΩ 0.41 0.82 1.64 Ω Static characteristics V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 12; Fig. 11 RG gate resistance PSMN2R1-40PL Product data sheet f = 1 MHz All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 5 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 Symbol Parameter Conditions Min Typ Max Unit ID = 25 A; VDS = 32 V; VGS = 5 V; - 87.8 - nC - 168.9 - nC - 20.8 - nC - 29.6 - nC Dynamic characteristics QG(tot) total gate charge Fig. 13; Fig. 14 ID = 25 A; VDS = 32 V; VGS = 10 V; Fig. 13; Fig. 14 QGS gate-source charge ID = 25 A; VDS = 32 V; VGS = 10 V; Fig. 14; Fig. 13 QGD gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; Fig. 13; Fig. 14 Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 9584 - pF Coss output capacitance Tj = 25 °C; Fig. 15 - 1190 - pF Crss reverse transfer capacitance - 585 - pF td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; - 56 - ns tr rise time RG(ext) = 5 Ω - 96 - ns td(off) turn-off delay time - 151 - ns tf fall time - 93 - ns IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.8 1.2 V Source-drain diode VSD source-drain voltage trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 45 - ns recovered charge VDS = 25 V - 62 - nC Qr 003aah289 300 10 ID (A) 3.5 003aah230 10 4.5 RDSon (mΩ ) VGS (V) = 3 7.5 200 5 2.8 100 2.6 2.5 2.4 0 0 0.5 1 0 1.5 V (V) 2 DS Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics; drain current as a function of drain-source voltage; typical values PSMN2R1-40PL Product data sheet 0 5 7.5 VGS (V) 10 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 1 February 2013 2.5 © Nexperia B.V. 2017. All rights reserved 6 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 003aah292 400 003aah025 3 VGS(th) (V) 2.5 ID (A) max 300 2 typ 200 1.5 100 Tj = 25 °C 0 Fig. 8. 0 1 2 min 1 Tj = 175 °C 3 0.5 4V GS (V) 0 -60 5 Transfer characteristics; drain current as a function of gate-source voltage; typical values Fig. 9. 003aah026 10-1 0 60 120 003aah235 R DSon (mΩ ) 10-2 180 Gate-source threshold voltage as a function of junction temperature 10 ID (A) Tj (° C) 2.6 2.8 3 8 min 10-3 typ max 6 10-4 4 10-5 2 3.5 4.5 V GS (V) = 10 10-6 0 1 2 V GS (V) 0 3 Fig. 10. Sub-threshold drain current as a function of gate-source voltage PSMN2R1-40PL Product data sheet 0 100 200 ID (A) 300 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 7 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 003aag820 2 VDS a ID 1.5 VGS(pl) VGS(th) 1 VGS QGS1 0.5 QGS2 QGS QGD QG(tot) 003aaa508 0 -60 0 60 120 Tj (°C) Fig. 13. Gate charge waveform definitions 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aah237 10 VGS (V) 003aah238 105 C (pF) 8 6 C iss 104 14 V Coss 4 VDS = 32V 10 3 Crss 2 0 0 60 120 QG (nC) 180 Fig. 14. Gate-source voltage as a function of gate charge; typical values PSMN2R1-40PL Product data sheet 102 10-1 1 10 VDS (V) 102 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 8 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 003aah299 300 IS (A) 250 200 150 100 Tj = 175 °C 50 0 0 0.3 0.6 Tj = 25 ° C 0.9 V SD (V) 1.2 Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN2R1-40PL Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 9 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 17. Package outline TO-220AB (SOT78) PSMN2R1-40PL Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 10 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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PSMN2R1-40PL Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 11 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN2R1-40PL Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 12 / 13 PSMN2R1-40PL Nexperia N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 01 February 2013 PSMN2R1-40PL Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © Nexperia B.V. 2017. All rights reserved 13 / 13