MBR260HWTR

SANGDEST MICROELECTRONICS MBR260HW Green Products Technical Data Data Sheet N1503, Rev. A MBR260HW SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration Features: • • • • • • • • 125 °C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions (In mm/Inches) SOD-123 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR260HW Green Products Technical Data Data Sheet N1503, Rev. A Marking Diagram: Where X is Date Code L26 = Part Name Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device MBR260HW Package SOD-123 (Pb-Free) Shipping 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR260HW Green Products Technical Data Data Sheet N1503, Rev. A Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol Value Unit VRRM VRWM VR 60 V IO 2 A @IF = 1A,TA = 25°C @IF = 2A,TA = 25°C VFM 0.52 0.66 V @TA = 25°C I RM 50 μA IFSM 30 A Cj 100 pF TJ 125 °C TSTG -55 to +150 °C wt 0.028 g Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 55°C) Forward Voltage Peak Reverse Current Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half-wave, Single Phase, 60 Hz) Maximum Junction Capacitance (Note 1) Operating Junction Temperature Range Storage Temperature Range Approximate Weight Case Style SOD-123 Note 1. Measured at 1MHz and applied reverse voltage of 5.0V D.C. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR260HW Green Products Technical Data Data Sheet N1503, Rev. A 100 Instantaneous Reverse Current (mA) Junction Capacitance (PF) 1000 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 TJ=125℃ 10 1 0.1 TJ=25℃ 0.01 0.001 10 30 40 50 60 70 80 90 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig.2-Typical Reverse Characteristics Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) 20 10 TJ=125℃ TJ=25℃ 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 Forward Voltage Drop (V) Fig.3-Typical Forward Voltage Drop Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1503, Rev. A MBR260HW Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •