TSF20H100C-S C0G

TSF20H100C-S – TSF20H150C-S Taiwan Semiconductor 20A, 100V - 150V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 20 A VRRM 100 - 150 V IFSM 120 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM TSF20H 100C-S TSF20H 100C 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device TSF20H 120C-S TSF20H 120C 120 TSF20H 150C-S TSF20H 150C 150 84 105 UNIT V V IF 20 A IFSM 120 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage 1 Version: B2105 TSF20H100C-S – TSF20H150C-S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 4.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) TYP MAX UNIT TSF20H100C-S SYMBOL 0.59 - V TSF20H120C-S IF = 5A, TJ = 25°C 0.66 - V TSF20H150C-S 0.74 - V TSF20H100C-S 0.71 0.79 V TSF20H120C-S IF = 10A, TJ = 25°C 0.78 0.86 V 0.82 0.92 V 0.53 - V TSF20H120C-S IF = 5A, TJ = 125°C 0.56 - V TSF20H150C-S 0.60 - V TSF20H100C-S 0.62 0.70 V TSF20H120C-S IF = 10A, TJ = 125°C 0.64 0.72 V TSF20H150C-S 0.68 0.78 V - 150 µA - 100 µA - 18 mA - 12 mA TSF20H150C-S VF TSF20H100C-S TSF20H100C-S TSF20H120C-S TJ = 25°C Reverse current @ rated VR (2) per diode TSF20H150C-S TSF20H100C-S TSF20H120C-S TJ = 125°C TSF20H150C-S IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF20HxC-S ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF20H100C-S) to 150V(TSF20H150C-S) 2 Version: B2105 TSF20H100C-S – TSF20H150C-S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TSF20H100C-S-120C-S 20 TSF20H100C-S CAPACITANCE (pF) 15 10 TSF20H150C-S 1000 TSF20H120C-S 100 TSF20H150C-S 5 f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 10 TJ=150°C 1 0.1 TJ=100°C TJ=125°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TSF20H100C-S 10 UF1DLW 1 0.1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSF20H120C-S TJ=150°C 1 TJ=125°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 TJ=100°C 0.5 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 0.1 TJ=25°C 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics TSF20H100C-S 10 (A) 25 100 100 10 TSF20H120C-S 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 3 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=25°C 0.1 (A) AVERAGE FORWARD CURRENT (A) 25 0.3 0.4 0.5 0.7 0.5 0.6 0.7 FORWARD VOLTAGE0.8 (V) 0.9 0.9 1.1 1 Version: B2105 TSF20H100C-S – TSF20H150C-S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TSF20H150C-S 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TSF20H150C-S 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 TJ=25°C (A) 100 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 1.1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 Version: B2105 1.2 TSF20H100C-S – TSF20H150C-S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: B2105 TSF20H100C-S – TSF20H150C-S Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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