MBRF760HC0G

MBRF735 – MBRF7150 Taiwan Semiconductor 7.5A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for over-voltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 7.5 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 °C Package ITO-220AC Configuration Single die ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device MBRF MBRF MBRF MBRF MBRF MBRF MBRF UNIT 735 745 750 760 790 7100 7150 MBRF MBRF MBRF MBRF MBRF MBRF MBRF 735 745 750 760 790 7100 7150 35 45 50 60 90 100 150 V Repetitive peak revers voltage VRRM Reverse voltage total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage Junction temperature IF 7.5 A IFSM 150 A Storage temperature IRRM 24 31 35 42 1.0 63 0.5 70 105 V A IFRM 15 A dv/dt 10,000 V/µs TJ -55 to +150 °C TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: K2105 MBRF735 – MBRF7150 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 7 °C/W Junction-to-case resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) MBRF735 MBRF745 MBRF750 MBRF760 MBRF790 MBRF7100 MBRF7150 MBRF735 MBRF745 MBRF750 MBRF760 MBRF790 MBRF7100 MBRF7150 MBRF735 MBRF745 MBRF750 MBRF760 MBRF790 MBRF7100 MBRF7150 MBRF735 MBRF745 MBRF750 MBRF760 MBRF790 MBRF7100 MBRF7150 MBRF735 MBRF745 MBRF750 MBRF760 MBRF790 MBRF7100 MBRF7150 MBRF735 MBRF745 MBRF750 MBRF760 MBRF790 MBRF7100 MBRF7150 SYMBOL IF = 7.5A, TJ = 25°C IF = 15A, TJ = 25°C VF IF = 7.5A, TJ = 125°C IF = 15A, TJ = 125°C TJ = 25°C TYP MAX UNIT - - V - 0.75 V - 0.92 V - 1.02 V - 0.84 V - - V - - V - - V - 0.57 V - 0.65 V - 0.82 V - 0.92 V - 0.72 V - - V - - V - - V - 100 µA - 15 mA - 10 mA - 5 mA IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: K2105 MBRF735 – MBRF7150 Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBRF7x ITO-220AC 50 / Tube MBRF7xH ITO-220AC 50 / Tube Notes: 1. “x” defines voltage from 35V(MBRF735) to 150V(MBRF7150) 2. “H” means AEC-Q101 qualified 3 Version: K2105 MBRF735 – MBRF7150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 MBRF750-7150 MBRF735-745 7.5 CAPACITANCE (pF) 6 4.5 MBRF735-745 3 MBRF750-760 100 MBRF790-7150 1.5 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 10 TJ=125°C 1 TJ=75°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 10 100 Fig.4 Typical Forward Characteristics 100 90 100 100 10 MBRF735-745 MBRF750-760 UF1DLW 1MBRF790-7100 10 TJ=125°C TJ=125°C TJ=25°C 0.1 MBRF7150 1 0.01 TJ=25°C Pulse width 300μs Pulse width 1% duty cycle 0.001 0.1 0.4 0.40.50.5 0.6 0.70.8 0.8 0.10.3 0.2 0.3 0.6 0.7 0.9 10.9 1.1 11.2 1.1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Maximum Non-Repetitive Forward Surge Current 175 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics MBRF735-745 MBRF750-7150 1 REVERSE VOLTAGE (V) (A) AVERAGE FORWARD CURRENT (A) 9 150 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: K2105 1.2 MBRF735 – MBRF7150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Characteristics TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: K2105 MBRF735 – MBRF7150 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AC MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2105 MBRF735 – MBRF7150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: K2105