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HER157G R0G

HER157G R0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO-204AC

  • 描述:

    DIODE GEN PURP 800V 1.5A DO204AC

  • 数据手册
  • 价格&库存
HER157G R0G 数据手册
HER151G – HER158G Taiwan Semiconductor 1.5A, 50V - 1000V High Efficient Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Glass passivated chip junction High efficiency, Low VF High current capability High surge current capability Low power loss RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1.5 A VRRM 50 - 1000 V IFSM 50 A TJ MAX 150 °C Package DO-204AC (DO-15) Configuration Single die APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: DO-204AC (DO-15) Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.400g (approximately) DO-204AC (DO-15) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SYMBOL HER HER HER HER HER HER HER HER UNIT 151G 152G 153G 154G 155G 156G 157G 158G HER HER HER HER HER HER HER HER 151G 152G 153G 154G 155G 156G 157G 158G VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 1.5 A IFSM 50 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: I2105 HER151G – HER158G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJA 60 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS HER151G HER152G HER153G HER154G HER155G HER156G HER157G HER158G (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance Reverse recovery time IF = 1.5A, TJ = 25°C VF IR TJ = 125°C HER151G HER152G HER153G HER154G HER155G HER156G HER157G HER158G HER151G HER152G HER153G HER154G HER155G HER156G HER157G HER158G SYMBOL 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 5 µA - 150 µA 35 - pF 20 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING HER15xG DO-204AC (DO-15) 3,500 / Tape & Reel HER15xG A0G DO-204AC (DO-15) 1,500 / Ammo box HER15xGH DO-204AC (DO-15) 3,500 / Tape & Reel HER15xGHA0G DO-204AC (DO-15) 1,500 / Ammo box Notes: 1. "x" defines voltage from 50V (HER151G) to 1000V (HER158G) 2. “H” means AEC-Q101 qualified 2 Version: I2105 HER151G – HER158G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 HER151G-HER155G 1.5 CAPACITANCE (pF) 1 0.5 10 HER156G-HER158G f=1.0MHz Vsig=50mVp-p 0 25 50 75 100 125 1 150 1 10 AMBIENT TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C 10 TJ=75°C 1 TJ=25°C 0.1 20 30 40 50 60 70 80 90 100 1010 HER151G-HER154G UF1DLW 1 HER155G TJ=125°C TJ=25°C 10.1 0.01 HER156G-HER158G 0.1 0.001 0.50.3 0.7 0.4 0.9 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% Pulse width 1% duty duty cycle cycle 1.1 0.6 1.3 0.7 1.5 0.8 1.7 0.9 11.9 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 60 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (µA) Fig.3 Typical Reverse Characteristics 10 100 (A) AVERAGE FORWARD CURRENT (A) 2 8.3ms single half sine wave 50 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: I2105 1.2 HER151G – HER158G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: I2105 HER151G – HER158G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AC (DO-15) MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2105 HER151G – HER158G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2105
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