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SS15HM2G

SS15HM2G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AC

  • 描述:

    DIODE SCHOTTKY 50V 1A DO214AC

  • 数据手册
  • 价格&库存
SS15HM2G 数据手册
SS12 – SS115 Taiwan Semiconductor 1A, 20V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● PARAMETER VALUE UNIT IF 1 A VRRM 20 - 150 V IFSM 40 A TJ MAX 125, 150 °C Package DO-214AC (SMA) Configuration Single die Switching mode power supply (SMPS) Adapters Monitor DC/DC converters TV MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of offstate voltage Junction temperature Storage temperature SYMBOL SS12 SS13 SS14 SS15 SS16 SS19 SS110 SS115 UNIT SS12 SS13 SS14 SS15 SS16 SS19 SS110 SS115 VRRM 20 30 40 50 60 90 100 150 V VR(RMS) 14 21 28 35 42 63 70 105 V IF 1 A IFSM 40 A dV/dt 10,000 V/µs TJ - 55 to +125 TSTG - 55 to +150 - 55 to +150 1 °C °C Version: Q2102 SS12 – SS115 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 28 °C/W Junction-to-ambient thermal resistance RӨJA 88 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) SS12 SS13 SS14 SS15 SS16 SS19 SS110 SS115 SS12 SS13 SS14 SS15 SS16 SS19 SS110 SS115 SS12 SS13 SS14 SS15 SS16 SS19 SS110 SS115 SS12 SS13 SS14 SS15 SS16 SS19 SS110 SS115 SS12 SS13 SS14 SS15 SS16 SS19 SS110 SS115 SYMBOL IF = 1A, TJ = 25°C VF IF = 1A, TJ = 100°C TYP MAX UNIT - 0.50 V - 0.75 V - 0.80 V - 0.95 V - 0.40 V - 0.65 V - 0.70 V - 0.85 V - 0.2 mA - 0.1 mA - 6 mA - 5 mA - - mA - - mA - - mA - 2 mA TJ = 25°C TJ = 100°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: Q2102 SS12 – SS115 Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SS1x DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 20V(SS12) to 150V(SS115) 3 Version: Q2102 SS12 – SS115 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 CAPACITANCE (pF) SS15 - SS115 1 SS12-SS14 SS15-SS16 SS19-SS115 100 SS12 - SS14 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 1 0.1 TJ=75°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 10 10 SS15 - SS16 UF1DLW 1 SS12 - SS14 TJ=125°C 1 0.1 SS19 - SS110 TJ=25°C SS115 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 0.4 0.5 0.6 0.7 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.4 0.9 1.6 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 50 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics SS12 - SS14 SS15 - SS115 10 (A) AVERAGE FORWARD CURRENT (A) 2 8.3ms single half sine wave 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: Q2102 1.2 SS12 – SS115 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Characteristics TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: Q2102 SS12 – SS115 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: Q2102 SS12 – SS115 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: Q2102
SS15HM2G 价格&库存

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