BZD27C33PHMHG

BZD27C10P – BZD27C220P Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 10 - 220 V Test current IZT 5 - 50 mA Ptot 1 W TJ MAX 175 °C Package Sub SMA Configuration Single die APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit MECHANICAL DATA ● ● ● ● ● ● Case: Sub SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT VF 1.2 V 2.3 W 1.0 W PZSM 300 W PRSM 150 W PRSM 100 W Junction temperature TJ - 55 to +175 °C Storage temperature TSTG - 55 to +175 °C Forward voltage @ IF = 0.2A TL = 73°C Power dissipation TA = 25°C Non-repetitive peak pulse power dissipation 100μs square pulse (2) Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C10P to BZD27C100P) Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C110P to BZD27C220P) (1) Ptot Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge 1 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 44 °C/W Junction-to-ambient thermal resistance RӨJA 88 °C/W Junction-to-case thermal resistance RӨJC 48 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING BZD27CxP Sub SMA 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 10V(BZD27C10P) to 220V(BZD27C220P) 2 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Working Voltage Differential Resistance Temperature Coefficient Test Current VZ @ IZT rdif @ IZ αZ @ IZ IZT IR VR V Ω %/ C mA μA V Marking code o Min Nom Max Typ Max Min Max Reverse Current@ Reverse Voltage Max BZD27C10P E1 9.4 10 10.6 2 4 0.05 0.09 50 7 7.5 BZD27C11P E2 10.4 11 11.6 4 7 0.05 0.10 50 4 8.2 BZD27C12P E3 11.4 12.05 12.7 4 7 0.05 0.10 50 3 9.1 BZD27C13P E4 12.4 13.25 14.1 5 10 0.05 0.10 50 2 10 BZD27C15P E5 13.8 14.7 15.6 5 10 0.05 0.10 25 1 11 BZD27C16P E6 15.3 16.2 17.1 6 15 0.06 0.11 25 1 12 BZD27C18P E7 16.8 17.95 19.1 6 15 0.06 0.11 25 1 13 BZD27C20P E8 18.8 21.2 6 15 0.06 0.11 25 1 15 BZD27C22P E9 20.8 22.05 23.3 6 15 0.06 0.11 25 1 16 BZD27C24P F0 22.8 24.2 25.6 7 15 0.06 0.11 25 1 18 BZD27C27P F1 25.1 27 28.9 7 15 0.06 0.11 25 1 20 BZD27C30P F2 28 30 32 8 15 0.06 0.11 25 1 22 BZD27C33P F3 31 33 35 8 15 0.06 0.11 25 1 24 BZD27C36P F4 34 36 38 21 40 0.06 0.11 10 1 27 BZD27C39P F5 37 39 41 21 40 0.06 0.11 10 1 30 BZD27C43P F6 40 43 46 24 45 0.07 0.12 10 1 33 BZD27C47P F7 44 47 50 24 45 0.07 0.12 10 1 36 BZD27C51P F8 48 51 54 25 60 0.07 0.12 10 1 39 BZD27C56P F9 52 56 60 25 60 0.07 0.12 10 1 43 BZD27C62P G0 58 62 66 25 80 0.08 0.13 10 1 47 BZD27C68P G1 64 68 72 25 80 0.08 0.13 10 1 51 BZD27C75P G2 70 74.5 79 30 100 0.08 0.13 10 1 56 BZD27C82P G3 77 82 87 60 200 0.08 0.13 10 1 62 BZD27C91P G4 85 90.5 96 60 200 0.08 0.13 5 1 68 BZD27C100P G5 94 100 106 60 200 0.09 0.13 5 1 75 BZD27C110P G6 104 110 116 80 250 0.09 0.13 5 1 82 BZD27C120P G7 114 120.5 127 150 300 0.09 0.13 5 1 91 BZD27C130P G 124 132.5 141 150 300 0.09 0.13 5 1 100 BZD27C150P G9 138 147 156 150 300 0.09 0.13 5 1 110 BZD27C160P H0 153 162 171 150 350 0.09 0.13 5 1 120 BZD27C180P H1 168 179.5 191 280 450 0.09 0.13 5 1 130 BZD27C200P H2 188 200 212 350 750 0.09 0.13 5 1 150 BZD27C220P H3 208 220.5 233 430 900 0.09 0.13 5 1 160 20 3 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Power Dissipation Fig.2 Typical Junction Capacitance 1000 2.0 C12P RthjL=44°C/W CAPACITANCE (pF) POWER DISSIPATION(W) 2.5 1.5 RthjA=88°C/W 1.0 100 C27P 0.5 C200P 10 0.0 25 55 85 115 145 0 175 TEMPERATURE (°C) 1 2 3 REVERSE VOLTAGE (V) 1010 1 1 0.1 UF1DLW Typ. VF Max. VF TJ=125°C TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) Fig.3 Typical Forward Characteristics 0.01 0.1 0.0010.6 0.7 0.8 0.9 0.3 0.4 0.5 Pulse width 1 1.1 1.2 1.3 1.4 1.5 1.6 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) 4 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Sub SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: AB2103