BZT52B2V4-G RHG

BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor 410mW 2% Zener Diodes FEATURES ● ● ● ● ● KEY PARAMETERS Wide zener voltage range selection: 2.4V to 75V VZ Tolerance Selection of ± 2% Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 2.4-75 V Test current IZT 5-2 mA Ptot 410 mW VF at IF=10mA 0.9 V TJ Max. 150 °C APPLICATIONS ● Low voltage stabilizers or voltage references ● Adapters ● On-board DC/DC converter Package SOD-123 Configuration Single die MECHANICAL DATA ● Case: SOD-123 ● Molding compound: UL flammability classification rating 94V-0 ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: Indicated by cathode band ● Weight: 10.54mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage @ IF=10mA SYMBOL VALUE UNIT VF 0.9 V Ptot 410 mW Junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C SYMBOL TYP UNIT RӨJA 357 °C/W Total power dissipation THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version: H2002 BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) TYPICAL PART MARKING NUMBER CODE ZENER TEST VOLTAGE CURRENT VZ @ IZT IZT V mA REGULAR TEST LEAKAGE TEMPERATURE IMPEDANCE CURRENT CURRENT ZZT ZZK @ IZT @ IZK Ω Ω IZK mA COEFFICIENT CURRENT IR @ V R µA V @ IZTC IZTC mV/°C mA Min. Nom. Max. Max. Max. Min. Max. BZT52B2V4-G 2WX 2.35 2.4 2.45 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52B2V7-G 2W1 2.65 2.7 2.75 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52B3V0-G 2W2 2.94 3.0 3.06 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52B3V3-G 2W3 3.23 3.3 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52B3V6-G 2W4 3.53 3.6 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52B3V9-G 2W5 3.82 3.9 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V3-G 2W6 4.21 4.3 4.39 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V7-G 2W7 4.61 4.7 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52B5V1-G 2W8 5.00 5.1 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52B5V6-G 2W9 5.49 5.6 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52B6V2-G 2WA 6.08 6.2 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52B6V8-G 2WB 6.66 6.8 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52B7V5-G 2WC 7.35 7.5 7.65 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52B8V2-G 2WD 8.04 8.2 8.36 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52B9V1-G 2WE 8.92 9.1 9.28 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52B10-G 2WF 9.80 10 10.20 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52B11-G 2WG 10.78 11 11.22 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52B12-G 2WH 11.76 12 12.24 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52B13-G 2WI 12.74 13 13.26 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52B15-G 2WJ 14.70 15 15.30 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52B16-G 2WK 15.68 16 16.32 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52B18-G 2WL 17.64 18 18.36 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52B20-G 2WM 19.60 20 20.40 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52B22-G 2WN 21.56 22 22.44 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52B24-G 2WO 23.52 24 24.48 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52B27-G 2WP 26.46 27 27.54 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52B30-G 2WQ 29.40 30 30.60 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52B33-G 2WR 32.34 33 33.66 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52B36-G 2WS 35.28 36 36.72 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52B39-G 2WT 38.22 39 39.78 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52B43-G 2WU 42.14 43 43.86 2 130 350 0.5 0.1 29.4 36.4 45.2 2 BZT52B47-G 2WV 46.06 47 47.94 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52B51-G X1. 49.98 51 52.02 2 100 750 1.0 0.045 35.7 10.0 12.0 5 BZT52B56-G X2. 54.88 56 57.12 2 200 400 0.5 0.045 39.2 10.0 12.0 5 BZT52B62-G X3. 60.76 62 63.24 2 215 423 0.5 0.045 43.4 10.0 12.0 5 2 Max. TEST Version: H2002 BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) TYPICAL PART MARKING NUMBER CODE ZENER TEST VOLTAGE CURRENT VZ @ IZT IZT V mA REGULAR TEST LEAKAGE TEMPERATURE IMPEDANCE CURRENT CURRENT ZZT ZZK @ IZT @ IZK Ω Ω IZK IR @ V R mA µA V Max. TEST COEFFICIENT CURRENT @ IZTC IZTC mV/°C mA Min. Nom. Max. Max. Max. Min. Max. BZT52B68-G X4. 66.64 68 69.36 2 240 447 0.5 0.045 47.6 10.0 12.0 5 BZT52B75-G X5. 73.5 75 76.5 2 255 470 0.5 0.045 52.5 10.0 12.0 5 ORDERING INFORMATION ORDERING CODE (Note 1) PACKAGE PACKING BZT52Bxxx-G RHG SOD-123 3K / 7" Reel Note: 1. "xxx" defines voltage from 2.4V (BZT52B2V4-G) to 75V (BZT52B75-G) 3 Version: H2002 BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Power Dissipation Curve Fig.2 Zener Breakdown Characteristics 50 500 450 5V6 6V8 40 400 350 4V7 Iz (mA) Power Dissipation (mW) 3V9 2V7 300 250 30 20 200 8V2 3V3 Test current Iz 5mA 150 10 100 50 0 0 0 25 50 75 100 125 0 150 Ambient Temperature (°C) 1 2 3 4 5 6 7 8 9 10 Vz (V) Fig.3 Zener Breakdown Characteristics 30 10 12 15 Iz (mA) 20 18 22 Test current Iz 5mA 10 27 33 0 0 10 20 30 40 Vz (V) 4 Version: H2002 BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-123 SUGGEST PAD LAYOUT 5 Version: H2002 BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: H2002