MBRF1035 C0G

MBRF1035 – MBRF10200 Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for over-voltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 10 A VRRM 35 - 200 V IFSM 150 A TJ MAX 150 °C Package ITO-220AC Configuration Single die ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak revers voltage Reverse voltage total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) SYMBOL MBRF MBRF MBRF MBRF MBRF 1035 1045 1050 1060 1090 MBRF MBRF MBRF MBRF MBRF 1035 1045 1050 1060 1090 MBRF 10100 MBRF 10100 MBRF 10150 MBRF 10150 MBRF UNIT 10200 MBRF 10200 VRRM 35 45 50 60 90 100 150 200 V VR(RMS) 24 31 35 42 63 70 105 140 V IF 10 A IFSM 150 A IRRM 1.0 0.5 IFRM 20 1 A A Version: M2105 MBRF1035 – MBRF10200 Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Critical rate of rise of off-state voltage Junction temperature Storage temperature MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF UNIT 1035 1045 1050 1060 1090 10100 10150 10200 dv/dt 10,000 V/µs TJ -55 to +150 °C TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL MBRF1035-10150 Junction-to-case resistance MBRF10200 TYP UNIT 3 °C/W 4 °C/W RӨJC ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) MBRF1035 MBRF1045 MBRF1050 MBRF1060 MBRF1090 MBRF10100 MBRF10150 MBRF10200 MBRF1035 MBRF1045 MBRF1050 MBRF1060 MBRF1090 MBRF10100 MBRF10150 MBRF10200 MBRF1035 MBRF1045 MBRF1050 MBRF1060 MBRF1090 MBRF10100 MBRF10150 MBRF10200 MBRF1035 MBRF1045 MBRF1050 MBRF1060 MBRF1090 MBRF10100 MBRF10150 MBRF10200 SYMBOL TYP MAX UNIT - 0.70 V - 0.80 V - 0.85 V - 1.05 V - 0.57 V - 0.70 V - 0.71 V - - V - 100 µA - 15 mA - 10 mA - 6 mA - 2 mA IF = 10A, TJ = 25°C VF IF = 10A, TJ = 125°C TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: M2105 MBRF1035 – MBRF10200 Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBRF10x ITO-220AC 50 / Tube MBRF10xH ITO-220AC 50 / Tube Notes: 1. “x” defines voltage from 35V(MBRF1035) to 200V(MBRF10200) 2. “H” means AEC-Q101 qualified 3 Version: M2105 MBRF1035 – MBRF10200 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 MBRF1035-1045 MBRF1050-10200 CAPACITANCE (pF) 10 MBRF1035-1045 5 MBRF1050-1060 100 MBRF1090-10200 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 10 TJ=125°C 1 0.1 TJ=75°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics 100 90 100 100 10 MBRF1035-1045 MBRF1050-1060 UF1DLW 1MBRF1090-10150 10 TJ=125°C TJ=125°C 0.1 TJ=25°C MBRF10200 1 0.01 TJ=25°C Pulse width 300μs Pulse width 1% duty cycle 0.001 0.1 0.4 0.40.50.5 0.6 0.70.8 0.8 0.10.3 0.2 0.3 0.6 0.7 0.9 10.9 1.1 11.2 1.1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Maximum Non-Repetitive Forward Surge Current 175 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics MBRF1035-1045 MBRF1050-10150 10 REVERSE VOLTAGE (V) 150 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 15 Version: M2105 1.2 MBRF1035 – MBRF10200 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Characteristics TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: M2105 MBRF1035 – MBRF10200 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AC MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: M2105 MBRF1035 – MBRF10200 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: M2105