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SRAS8150 MNG

SRAS8150 MNG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO263

  • 描述:

    DIODE SCHOTTKY 150V 8A TO263AB

  • 数据手册
  • 价格&库存
SRAS8150 MNG 数据手册
SRAS820 – SRAS8150 Taiwan Semiconductor 8A, 20V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 8 A VRRM 20 - 150 V IFSM 150 A TJ MAX 125, 150 APPLICATIONS °C 2 Package TO-263AB (D PAK) Configuration Single die ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of offstate voltage Junction temperature Storage temperature SRAS SRAS SRAS SRAS SRAS SRAS SRAS SRAS UNIT 820 830 840 850 860 890 8100 8150 SRAS SRAS SRAS SRAS SRAS SRAS SRAS SRAS 820 830 840 850 860 890 8100 8150 VRRM 20 30 40 50 60 90 100 150 V VR(RMS) 14 21 28 35 42 63 70 105 V IF 8 A IFSM 150 A dv/dt 10,000 V/µs TJ -55 to +125 TSTG -55 to +150 -55 to +150 1 °C °C Version: K2103 SRAS820 – SRAS8150 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS SRAS820 SRAS830 SRAS840 SRAS850 SRAS860 (1) IF = 8A, TJ = 25°C SYMBOL VF SRAS890 SRAS8100 SRAS8150 Reverse current @ rated VR (2) SRAS820 SRAS830 SRAS840 SRAS850 TJ = 25°C SRAS860 SRAS890 SRAS8100 SRAS8150 SRAS820 SRAS830 SRAS840 SRAS850 TJ = 100°C SRAS860 SRAS890 SRAS8100 SRAS8150 SRAS820 SRAS830 SRAS840 SRAS850 TJ = 125°C SRAS860 SRAS890 SRAS8100 SRAS8150 TYP MAX UNIT - 0.55 V - 0.70 V - 0.95 V - 100 µA - 5 mA - - mA - - mA - 5 mA IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) SRAS8x PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 20V(SRAS820) to 150V(SRAS8150) 2 Version: K2103 SRAS820 – SRAS8150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 SRAS850 - SRAS8150 8 CAPACITANCE (pF) 6 SRAS820 - SRAS840 4 100 2 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C TJ=75°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 SRAS850 - SRAS860 10 1 SRAS820 - SRAS840 UF1DLW TJ=125°C TJ=25°C 0.1 1 SRAS890 - SRAS8150 0.01 0.1 0.001 0.2 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.5 0.3 0.4 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.6 0.7 0.8 0.9 1.0 0.6 0.7 0.8 0.9 1.1 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 200 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 10 0.1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 10 (A) AVERAGE FORWARD CURRENT (A) 10 8.3ms single half sine wave 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: K2103 1.2 SRAS820 – SRAS8150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: K2103 SRAS820 – SRAS8150 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2103 SRAS820 – SRAS8150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: K2103
SRAS8150 MNG 价格&库存

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