MBRF20L100CTHC0G

MBRF20L100CT – MBRF20L120CT Taiwan Semiconductor 20A, 100V - 120V Low VF Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 20 A VRRM 100 - 120 V IFSM 150 A TJ MAX 150 °C APPLICATIONS Package ITO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device MBRF20L100CT MBRF20L120CT UNIT MBRF20L100CT MBRF20L120CT Repetitive peak reverse voltage VRRM 100 120 V Reverse voltage, total rms value VR(RMS) 70 84 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage Junction temperature Storage temperature Notes: 1. tp = 2.0μs, 1.0KHz IF 20 A IFSM 150 A IRRM 1 A IFRM 20 A dv/dt 10,000 V/µs TJ TSTG -55 to +150 -55 to +150 °C °C 1 Version: G2105 MBRF20L100CT – MBRF20L120CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL Junction-to-case thermal resistance MBRF20L100CT MBRF20L120CT RӨJC TYP UNIT 5.5 °C/W 5.0 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRF20L100CT MBRF20L120CT IF = 10A,TJ = 25°C MBRF20L100CT Forward voltage per diode (1) MBRF20L120CT IF = 20A,TJ = 25°C VF MBRF20L100CT MBRF20L120CT IF = 10A,TJ = 125°C MBRF20L100CT MBRF20L120CT MBRF20L100CT Reverse current @ rated VR per diode (2) MBRF20L120CT MBRF20L100CT MBRF20L120CT IF = 20A,TJ = 125°C TJ = 25°C IR TJ = 125°C TYP MAX UNIT 0.72 0.75 V 0.78 0.83 V 0.81 0.85 V 0.86 0.90 V 0.58 0.68 V 0.63 0.72 V 0.67 0.75 V 0.73 0.80 V - 20 µA - 15 mA - 10 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBRF20LxCT ITO-220AB 50 / Tube MBRF20LxCTH ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(MBRF20L100CT) to 120V(MBRF20L120CT) 2. “H” means AEC-Q101 qualified 2 Version: G2105 MBRF20L100CT – MBRF20L120CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 MBRF20L100CT 20 CAPACITANCE (pF) 15 10 MBRF20L120CT 1000 MBRF20L100CT MBRF20L120CT 100 5 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 100 MBRF20L100CT MBRF20L120CT 10 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics 10000 90 100 100 10 MBRF20L100CT MBRF20L120CT 10 UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 0.1 1 TJ=25°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 175 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (µA) Fig.3 Typical Reverse Characteristics 1000 10 REVERSE VOLTAGE (V) 150 8.3ms single half sine wave 125 100 MBRF20L100CT 75 50 MBRF20L120CT 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 (A) AVERAGE FORWARD CURRENT (A) 25 Version: G2105 1.2 MBRF20L100CT – MBRF20L120CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: G2105 MBRF20L100CT – MBRF20L120CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: G2105 MBRF20L100CT – MBRF20L120CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: G2105