MBRF1035 – MBRF10200
Taiwan Semiconductor
10A, 35V - 200V Schottky Barrier Rectifier
FEATURES
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KEY PARAMETERS
AEC-Q101 qualified available
Low power loss, high efficiency
Guard ring for over-voltage protection
High surge current capability
UL Recognized File # E-326243
RoHS Compliant
Halogen-free according to IEC 61249-2-21
APPLICATIONS
PARAMETER
VALUE
UNIT
IF
10
A
VRRM
35 - 200
V
IFSM
150
A
TJ MAX
150
°C
Package
ITO-220AC
Configuration
Single die
● Switching mode power supply (SMPS)
● Adapters
● DC to DC converter
MECHANICAL DATA
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Case: ITO-220AC
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Mounting torque: 0.56 N⋅m maximum
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 1.70g (approximately)
ITO-220AC
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Marking code on the
device
Repetitive peak
revers voltage
Reverse voltage total
rms value
Forward current
Surge peak forward
current, 8.3ms single
half sine wave
superimposed on
rated load
Peak repetitive
reverse surge
(1)
current
Peak repetitive
forward current
(Rated VR, Square
wave, 20KHz)
SYMBOL
MBRF MBRF MBRF MBRF MBRF
1035 1045 1050 1060 1090
MBRF MBRF MBRF MBRF MBRF
1035
1045
1050
1060
1090
MBRF
10100
MBRF
10100
MBRF
10150
MBRF
10150
MBRF
UNIT
10200
MBRF
10200
VRRM
35
45
50
60
90
100
150
200
V
VR(RMS)
24
31
35
42
63
70
105
140
V
IF
10
A
IFSM
150
A
IRRM
1.0
0.5
IFRM
20
1
A
A
Version: M2105
MBRF1035 – MBRF10200
Taiwan Semiconductor
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Critical rate of rise of
off-state voltage
Junction temperature
Storage temperature
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNIT
1035 1045 1050 1060 1090 10100 10150 10200
dv/dt
10,000
V/µs
TJ
-55 to +150
°C
TSTG
-55 to +175
°C
Notes:
1. tp = 2.0μs, 1.0KHz
THERMAL PERFORMANCE
PARAMETER
SYMBOL
MBRF1035-10150
Junction-to-case resistance
MBRF10200
TYP
UNIT
3
°C/W
4
°C/W
RӨJC
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage
CONDITIONS
(1)
Reverse current @ rated VR
(2)
MBRF1035
MBRF1045
MBRF1050
MBRF1060
MBRF1090
MBRF10100
MBRF10150
MBRF10200
MBRF1035
MBRF1045
MBRF1050
MBRF1060
MBRF1090
MBRF10100
MBRF10150
MBRF10200
MBRF1035
MBRF1045
MBRF1050
MBRF1060
MBRF1090
MBRF10100
MBRF10150
MBRF10200
MBRF1035
MBRF1045
MBRF1050
MBRF1060
MBRF1090
MBRF10100
MBRF10150
MBRF10200
SYMBOL
TYP
MAX
UNIT
-
0.70
V
-
0.80
V
-
0.85
V
-
1.05
V
-
0.57
V
-
0.70
V
-
0.71
V
-
-
V
-
100
µA
-
15
mA
-
10
mA
-
6
mA
-
2
mA
IF = 10A, TJ = 25°C
VF
IF = 10A, TJ = 125°C
TJ = 25°C
IR
TJ = 125°C
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
2
Version: M2105
MBRF1035 – MBRF10200
Taiwan Semiconductor
ORDERING INFORMATION
ORDERING CODE(1)(2)
PACKAGE
PACKING
MBRF10x
ITO-220AC
50 / Tube
MBRF10xH
ITO-220AC
50 / Tube
Notes:
1. “x” defines voltage from 35V(MBRF1035) to 200V(MBRF10200)
2. “H” means AEC-Q101 qualified
3
Version: M2105
MBRF1035 – MBRF10200
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
1000
MBRF1035-1045
MBRF1050-10200
CAPACITANCE (pF)
10
MBRF1035-1045
5
MBRF1050-1060
100
MBRF1090-10200
f=1.0MHz
Vsig=50mVp-p
10
0
25
50
75
100
125
0.1
150
1
CASE TEMPERATURE (°C)
INSTANTANEOUS FORWARD CURRENT (A)
10
TJ=125°C
1
0.1
TJ=75°C
0.01
TJ=25°C
0.001
10
20
30
40
50
60
70
80
100
Fig.4 Typical Forward Characteristics
100
90
100
100
10
MBRF1035-1045
MBRF1050-1060
UF1DLW
1MBRF1090-10150
10
TJ=125°C
TJ=125°C
0.1
TJ=25°C
MBRF10200
1
0.01
TJ=25°C
Pulse width 300μs
Pulse width
1% duty cycle
0.001
0.1
0.4 0.40.50.5 0.6
0.70.8 0.8
0.10.3
0.2 0.3
0.6 0.7
0.9
10.9 1.1 11.2 1.1
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.5 Maximum Non-Repetitive Forward Surge Current
175
PEAK FORWARD SURGE CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.3 Typical Reverse Characteristics
MBRF1035-1045
MBRF1050-10150
10
REVERSE VOLTAGE (V)
150
125
100
75
50
25
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
4
(A)
AVERAGE FORWARD CURRENT (A)
15
Version: M2105
1.2
MBRF1035 – MBRF10200
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.6 Typical Transient Thermal Characteristics
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION (s)
5
Version: M2105
MBRF1035 – MBRF10200
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
ITO-220AC
MARKING DIAGRAM
6
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Version: M2105
MBRF1035 – MBRF10200
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7
Version: M2105
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