BUK9213-60EJ

Automotive Power MOSFET Selection Guide 2016 Performance, Quality, Reliability Automotive Power MOSFETs } Semiconductor components play an increasingly important role in a vehicle’s performance, comfort and reliability. Only suppliers with specialist knowledge and experience can create the solutions that meet and exceed the current and future demands of automotive electronics modules and systems. } NXP is a clear leader in the area of power MOSFETs for automotive applications. Our dedicated focus on low-voltage MOSFET solutions, focused technical capability and in-depth understanding of automotive system requirements enables us to provide power semiconductor solutions that meet a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power management and control in engine, body or chassis applications, NXP power conductors can provide the answer to many automotive system power problems. 2 Automotive brochure } NXP’s power products are designed and manufactured around the key themes of performance, quality and reliability and are built to withstand long-term operation in some of the harshest environments within a typical vehicle.   } In addition, by providing a complete technology, device and service capability, NXP helps you meet the diverse and rigorous technical demands of today’s automotive power switching and control applications, driving the development of tomorrow’s vehicles and keeping you ahead of the rest. } Put simply, NXP gives you the power to meet the challenges of automotive power system design, every step of the way. Commitment to Quality Designed with automotive in mind } NXP Automotive Power MOSFETs are commonly deployed in many critical applications such as braking, power steering and engine management, where quality and reliability requirements go beyond mere compliance with AEC-Q101 standards. } Product qualification strategies start with a baseline of AEC-Q101, but far exceed its requirements to reflect real automotive mission profiles. } NXP has more than 15 years experience qualifying automotive-grade Trench MOSFETs in such applications, resulting in an impressive track record of reliability. } All processes and plants are subject to regular internal audits, as well as TS16949, VDA and specific customer audits. } Our rigorous attention to detail and commitment to automotive quality has resulted in a sub-ppm combined line, field and 0 Km failure rate for automotive customers. } NXP’s Design for Excellence (DfX) program ensures each new development builds on past learning and that best practices are always employed, resulting in continual product improvement. } Our dedicated team of product quality, failure analysis and process engineers supports our zero-defects culture at all stages of development and production. We’re determined to find real root causes and eliminate failure modes with widespread adoption of quality analysis tools and methodologies. Failure analysis is supported by a determination to find real Root Causes and eliminate failure modes with widespread adoption of quality analysis tools and methodologies. } Dedicated design and manufacturing facilities focused on providing superior automotive quality are at the heart of NXP’s manufacturing setup. From silicon and package design, through diffusion, and over to assembly and test, we carry out every process step for automotive products within our internal and qualified partner facilities. Automotive brochure 3 4 Steps to select an Automotive MOSFET 1 Select a voltage (e.g., 40 V) 2 Select a package (e.g., LFPAK56) 3 Choose an RDSon from our extensive range 4 Select a ‘BUK’ type and visit www.nxp.com/automotivemosfets to download datasheets, models and order samples Automotive-Grade MOSFET Naming Convention BUK 7 Y 3R5 40 E Segment ‘BUK’ for automotive grade Gate drive 7 = Standard level 6 = Intermediate level 9 = Logic level Package: 6 = D2PAK 2 = DPAK E = I2PAK 5 = TO-220 Y = LFPAK56 K = LFPAK56D M = LFPAK33 4 Automotive brochure TrenchMOS technology A = Generation 2 B = Generation 3 C = Generation 4 E = Generation 6 Voltage rating BVDSS rating R DSon in mΩ 3R5 means RDSon 40 W in a confined space, so MOSFETs with good switching performance combined with low on-state losses are required. Due to the space constraints and often limited heat sinking, products with low thermal impedance are also desirable. The longer the string of series-connected LEDs, the greater the VDS of the MOSFET required to control them. Interior lights and backlit LCDs where the power requirements are lower can be addressed by our large portfolio of LFPAK56, LFPAK56D and LFPAK33 devices. 26 VDS [max] [V] Application considerations Headlights deliver a variety of functions for the driver, including high beam, low beam, fog lights, daylight running, indicators and parking lights. Similarly, rear clusters provide illumination for braking, reversing, fog lights or indicators. Automotive brochure Typical two-channel controller Notes Automotive brochure 27 Notes 28 Automotive brochure Notes Automotive brochure 29 Follow us on twitter @mosfets www.nxp.com/automotivemosfets www.nxp.com NXP, the NXP logo and TrenchMOS are trademarks of NXP B.V. All other product or service names are the property of their respective owners. © 2015–2016 NXP B.V. Date of release: April 2016 Document order number: 9397 750 17643 Printed in the United Kingdom