GP2D010A120A

GP2D010A120A VDC QC IF 1200V SiC Schottky Diode Amp+ TM Features Amp+ TM Benefits • High surge current capable • Zero reverse recovery current • High bandwidth • Fast, temperature-independent switching Maximum Rating IF Surge non-repetitive forward current sine halfwave IF,SM Non-repetitive peak forward current IF,max i 2t value i 2dt • Motor drives • Zero switching loss • Higher efficiency • Smaller heat sink • Parallel devices with thermal stability • Switch mode power supplies • Power factor correction Part # Package Marking GP2D010A120A TO-220-2L 2D010A120 Conditions 33 TC=125 °C, Tj=175 °C 18 TC=150 °C, Tj=175 °C 12 80 TC=25 °C, tp=8.3 ms 50 200 TC=25 °C, tp=8.3 ms 27 TC=150 °C, tp=8.3 ms 10 1200 V 50 V/ns VRRM Tj=25 °C Turn-on slew rate, repetitive Ptot Soldering temperature Tsolder Mounting torque A TC=25 °C, tp=10 ms dv/dt TJ, Tstorage Unit TC=150 °C, tp=8.3 ms Diode dv/dt ruggedness Operating & storage temperature Value TC=25 °C, Tj=175 °C Repetitive peak reverse voltage Power dissipation Amp+ TM Applications • Unipolar rectifier Symbol Continuous forward current 1200 V 43 nC 10 A TC=25 °C Continuous Wave soldering leads M3 Screw A2s 188 W -55…175 °C 260 °C 1 N-m Electrical Characteristics, at Tj=25 °C, unless otherwise specified Static Characteristics Symbol DC blocking voltage VDC Diode forward voltage VF Reverse current IR 8/27/2015 Rev 2 Conditions IR=0.1mA min. 1200 Values typ. - max. - IF=10A, Tj=25 oC - 1.60 1.80 IF=10A, Tj=175 oC - 2.20 2.70 VR=1,200V, Tj=25 oC - 2.0 20 VR=1,200V, Tj=175 oC - 60 600 www.gptechgroup.com Unit V mA p.1 Amp +TM 1200V SiC Schottky Diode Parameter Symbol Conditions GP2D010A120A Values typ. min. Unit max. AC Characteristics QC VR=1,200V, Tj=25 oC - 43 - nC Switching time tC diF/dt=200 A/ms Tj=150 °C - -