FKBA3004

FKBA3004 N-Ch 30V Fast Switching MOSFETs FETek Technology Corp. Product Summary  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology BVDSS RDSON ID 30V 8.5mΩ 58A PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications. The FKBA3004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 58 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 1 38 A Continuous Drain Current, VGS @ 10V 1 12 A Continuous Drain Current, VGS @ 10V 1 9.6 A 115 A 57.8 mJ ID@TA=25℃ ID@TA=70℃ IDM Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 34 A Total Power Dissipation 4 46 W PD@TA=25℃ Total Power Dissipation 4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 1 Max. Unit --- 62 ℃/W --- 2.7 ℃/W 1 FKBA3004 N-Ch 30V Fast Switching MOSFETs FETek Technology Corp. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=10V , ID=30A --- 6.5 8.5 VGS=4.5V , ID=15A --- 11 14 1.2 1.5 2.5 V --- -5.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 38 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 2.9  Qg Total Gate Charge (4.5V) --- 12.6 17.6 --- 4.2 5.9 VDS=15V , VGS=4.5V , ID=15A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 5.1 7.1 Td(on) Turn-On Delay Time --- 4.6 9.2 uA nC Rise Time VDD=15V , VGS=10V , RG=3.3 --- 12.2 22 Turn-Off Delay Time ID=15A --- 26.6 53 Fall Time --- 8 16 Ciss Input Capacitance --- 1317 1844 Coss Output Capacitance --- 163 228 Crss Reverse Transfer Capacitance --- 131 183 Min. Typ. Max. Unit --- --- 58 A --- --- 115 A --- --- 1 V --- 9.2 --- nS --- 2 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current 2,5 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,5 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=34A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 2 FKBA3004 N-Ch 30V Fast Switching MOSFETs FETek Technology Corp. Typical Characteristics 100 ID Drain Current (A) 75 VGS=10V VGS=7V VGS=5V 50 VGS=4.5V VGS=3V 25 0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 12 ID =15A VGS , Gate to Source Voltage (V) IS -Source Current(A) 10 8 TJ=150℃ TJ=25℃ 6 4 2 0 0 0.3 0.6 8 6 VDS=24V 4 2 0 0.9 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of reverse 6 12 18 QG , Total Gate Charge (nC) 24 30 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) VDS=15V 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 FKBA3004 N-Ch 30V Fast Switching MOSFETs FETek Technology Corp. 10000 1000.00 F=1.0MHz 100us 1000 10.00 ID (A) Capacitance (pF) 10us 100.00 Ciss Coss 10ms 100ms DC 1.00 100 Crss 0.10 TC= 2 5 ℃ Single Pulse 10 1 5 9 13 17 21 0.01 0.1 25 1 10 VDS , Drain to Source Voltage (V) 100 1000 VDS (V) Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.fetek.com.tw Ver : A VGS Fig.17 Unclamped Inductive Switching Waveform FFARMwaveform 4