MMBTA42

MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Symbol Value Unit VCEO 300 200 300 200 VEBO 6 V Collector Current IC 500 mA Power Dissipation Ptot 350 Thermal Resistance Junction to Ambient RθJA 357 Tj, Tstg - 55 to + 150 Collector Base Voltage Collector Emitter Voltage MMBTA42 MMBTA43 MMBTA42 MMBTA43 VCBO Emitter Base Voltage Junction and Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 30 mA Collector Base Cutoff Current at VCB = 200 V at VCB = 160 V Emitter Base Cutoff Current at VEB = 6 V at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Collector Output Capacitance at VCB = 20 V, f = 1 MHz V V mW C/W O C O Symbol Min. Max. Unit hFE hFE hFE 25 80 40 200 - - MMBTA42 MMBTA43 ICBO ICBO - 0.1 0.1 µA MMBTA42 MMBTA43 IEBO IEBO - 0.1 0.1 µA MMBTA42 MMBTA43 V(BR)CBO V(BR)CBO 300 200 - V MMBTA42 MMBTA43 V(BR)CEO V(BR)CEO 300 200 - V V(BR)EBO 6 - V VCE(sat) - 0.5 V VBE(sat) - 0.9 V fT 50 - MHz Cob - 3 4 pF MMBTA42 MMBTA43 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBTA42 / MMBTA43 120 hFE, DC Current Gain VCE =10Vdc TJ=+125°C 100 80 TJ=25°C 60 40 TJ=-55°C 20 0 0.1 1.0 10 100 100 Ceb @ 1MHz 10 1 Ccb @ 1MHz 0.1 0.1 1 10 100 1000 tT, Current-Gain-Bandwidth (MHz) C, Capacitance (pF) IC, Collector Current (mA) Figure 1. DC Current Gain VCE=20V f=20MHz TJ=20°C 70 60 50 40 30 20 10 2.0 1.0 3.0 5.0 7.0 10 20 30 50 70 100 Ic, Collector Current (mA) Figure 3. Current-Gain-Bandwidth VR, Reverse Voltage (volts) Figure 2. Capacitance 1.4 A VBE(sat) @-55°C, IC/IB=10 B VBE(on) @ -55°C,VCE=10V 1.2 V, Voltage (volts) 80 C VBE(sat) @ 125°C,IC/IB=10 1.0 D VBE(sat) @ 25°C,IC/IB=10 0.8 E VBE(on) @ 125°C,VCE=10V 0.6 F VBE(on) @ 25°C,VCE=10V 0.4 G VCE(sat) @ 125°C,IC/IB=10 0.2 H VCE(sat) @ 25°C,IC/IB=10 I VCE(sat) @ -55°C,IC/IB=10 0.0 0.1 1.0 10 100 IC, Collector Current (mA) Figure 4."on" Voltages SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01