BT136S-800E
4Q Triac
15 September 2018
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a TO252 (DPAK) surface-mountable plastic
package intended for use in general purpose bidirectional switching and phase control applications.
This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Surface mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current
ITSM
Tj
Conditions
Min
Typ
Max
Unit
-
-
800
V
-
-
4
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
state current
-
-
25
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
-
27
A
-
-
125
°C
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
2.5
10
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
4
10
mA
full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
junction temperature
Static characteristics
IGT
gate trigger current
BT136S-800E
WeEn Semiconductors
4Q Triac
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
5
10
mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
-
11
25
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
2.2
15
mA
VT
on-state voltage
IT = 5 A; Tj = 25 °C; Fig. 10
-
1.4
1.7
V
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
-
50
-
V/µs
Simplified outline
Graphic symbol
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main
terminal 2
mb
T2
sym051
T1
G
DPAK (TO252N)
6. Ordering information
Table 3. Ordering information
Type number
BT136S-800E
BT136S-800E
Product data sheet
Package
Name
Description
Version
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
TO252N
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4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak onstate current
2
Conditions
2
Min
Max
Unit
-
800
V
full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
-
4
A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
-
25
A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
27
A
I t
I t for fusing
tp = 10 ms; SIN
-
3.1
A²s
dIT/dt
rate of rise of on-state
current
IG = 50 mA
-
50
A/µs
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
over any 20 ms period
003aae828
5
003aae830
12
IT(RMS)
(A)
10
IT(RMS)
(A)
4
8
3
6
2
4
1
0
- 50
2
0
50
100
Tmb (°C)
0
10-2
150
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
BT136S-800E
Product data sheet
10-1
1
10
surge duration (s)
f = 50 Hz
Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
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4Q Triac
003aae827
8
Ptot
(W)
6
4
conduction
angle, α
(degrees)
form
factor
a
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
101
Tmb(max)
α
(°C)
α = 180°
107
120°
α
90°
113
60°
30°
2
0
119
0
1
2
3
4
5
IT(RMS) (A)
125
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
003aae831
30
ITSM
(A)
25
20
15
t
5
0
ITSM
IT
10
1/f
Tj(init) = 25 °C max
1
10
102
103
number of cycles
104
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT136S-800E
Product data sheet
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003aae829
103
ITSM
IT
t
ITSM
(A)
tp
Tj(init) = 25 °C max
102
(1)
(2)
10
10-5
10-4
10-3
10-2
tp (s)
10-1
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT136S-800E
Product data sheet
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8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
half cycle; Fig. 6
-
-
3.7
K/W
full cycle; Fig. 6
-
-
3
K/W
thermal resistance
from junction to
ambient free air
in free air; printed circuit board (FR4)
mounted; standard footprint, singlesided copper, tin-plated
-
75
-
K/W
Rth(j-a)
003aae836
10
Zth(j-mb)
(K/W)
unidirectional
1
bidirectional
10- 1
P
tp
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
1
tp (s)
t
10
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT136S-800E
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9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
2.5
10
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
4
10
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
5
10
mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
-
11
25
mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
-
3
15
mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
-
10
20
mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
-
2.5
15
mA
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
-
4
20
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
2.2
15
mA
VT
on-state voltage
IT = 5 A; Tj = 25 °C; Fig. 10
-
1.4
1.7
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
-
0.7
1
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25
0.4
-
V
VD = 800 V; Tj = 125 °C
-
0.1
0.5
mA
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
-
50
-
V/µs
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
BT136S-800E
Product data sheet
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BT136S-800E
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4Q Triac
003aaf448
3
003aae835
3
IL
IL(25°C)
IGT
IGT (25 °C)
(1)
(2)
2
2
(3)
(4)
(1)
(2)
(3)
1
1
(4)
0
- 60
- 10
40
90
Tj (°C)
0
-60
140
(1) T2- G+
(2) T2- G(3) T2+ G(4) T2+ G+
-10
40
90
Tj (°C)
140
Fig. 8. Normalized latching current as a function of
junction temperature
Fig. 7. Normalized gate trigger current as a function of
junction temperature
003aae837
2.0
003aae834
12
IH
IH(25°C)
IT
(A)
1.5
8
1.0
4
0.5
0
-60
(1)
-10
40
90
Tj (°C)
0
140
0
(2)
(3)
1
2
VT (V)
3
Vo = 1.27 V
Rs = 0.091 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 10. On-state current as a function of on-state
voltage
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003aae832
1.6
VGT
VGT(25 °C)
1.2
0.8
0.4
0
-60
-10
40
90
Tj (°C)
140
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
BT136S-800E
Product data sheet
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10. Package outline
Fig. 12. Package outline DPAK (TO252N)
BT136S-800E
Product data sheet
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Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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Draft — The document is a draft version only. The content is still under
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representations or warranties as to the accuracy or completeness of
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
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data sheet shall define the specification of the product as agreed between
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shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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Please consult the most recently issued document before initiating or
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BT136S-800E
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
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liability for inclusion and/or use of WeEn Semiconductors products in such
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Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
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whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
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associated with their applications and products.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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Semiconductors products in order to avoid a default of the applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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In the event that customer uses the product for design-in and use in
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Semiconductors’ standard warranty and WeEn Semiconductors’ product
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between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics..............................................................7
10. Package outline........................................................ 10
11. Legal information..................................................... 11
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Date of release: 15 September 2018
BT136S-800E
Product data sheet
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