BC857B

BC856…BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Peak Collector Current S Junction Temperature Storage Temperature Range H C Value Unit 80 50 30 65 45 30 V V V V V V 5 V 100 mA -ICM 200 mA Ptot 200 mW Tj 150 O Tstg - 65 to + 150 O E T BC856 BC857, BC860 BC858, BC859 BC856 BC857, BC860 BC858, BC859 M E Emitter Base Voltage Power Dissipation Symbol -VCBO -VCBO -VCBO -VCEO -VCEO -VCEO -VEBO -IC C C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：08/08/2012 Rev：01 BC856…BC860 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Symbol Min. Max. Unit hFE hFE hFE 125 220 420 250 475 800 - -ICBO - 15 nA BC856 BC857, BC860 BC858, BC859 -V(BR)CBO -V(BR)CBO -V(BR)CBO 80 50 30 - V V V BC856 BC857, BC860 BC858, BC859 -V(BR)CES -V(BR)CES -V(BR)CES 80 50 30 - V V V BC856 BC857, BC860 BC858, BC859 -V(BR)CEO -V(BR)CEO -V(BR)CEO 65 45 30 - V V V -V(BR)EBO 5 - V -VCE(sat) -VCE(sat) - 0.3 0.65 V V -VBE(on) -VBE(on) 0.6 - 0.75 0.82 V V fT 100 - MHz Cob - 6 pF Current Gain Group A B C Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 1 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA M E Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA at -VCE = 5 V, -IC = 10 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz S Collector Output Capacitance at -VCB = 10 V, f = 1 MHz E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：08/08/2012 Rev：01 BC856…BC860 M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：08/08/2012 Rev：01