GT1003B

GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suitable for use in high frequency Synchronousrecification application. General Features Schematic Diagram @ 10V (Typ) 100V GT1003B 10N10 7A 115mΩ ● High density cell design for ultra low Rdson ● Lead free product is acquired Marking and Pin Assignment ● Excellent package for good heat dissipation ● RoHS Compliant Application ●Consumer electronic power supply ●Isolated DC/DC converter ●Motor control SOT-23 Ordering Information Part Number Marking GT1003B GT1003B Case SOT-23 Packaging 3000pcs/Reel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol VDS VGS ID IDM PD EAS TJ,TSTG Thermal Resistance, Junciton-case Thermal Resistance,Junction-to-Ambient (Note 2) Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Single pulsed avalanche energy (Note 5) Operating Junction and Storage Temperature Range Limit Unit 100 V ±20 V 7 A 21 A 17 W 1.2 mJ -55 To 150 ℃ RθJC 7.4 ℃/W RθJA 62 ℃/W Thermal Characteristic Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Off Characteristics HTTP://www.gofordsemi.com TEL:0 7 5 5-2996126 2 FAX : 075 5- 2 9 9 6 14 6 6 Page 1 GOFORD Gate-Body Leakage Current GT1003B IGSS VGS=±20V,VDS=0V - - ±100 nA VGS(th) RDS(ON) VDS=VGS,ID=250μA 1 1.95 3 V VGS=10V, ID=3.5A - 115 140 mΩ - 206 - PF - 28.9 - PF - 1.4 - PF On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 14.7 - ns Turn-on Rise Time tr - 3.5 - ns - 20.9 - ns - 2.7 - ns - 4.3 - nC - 1.5 - nC - 1.1 - nC Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate plateau voltage VDD=50V,ID=5A VGS=10V,RGEN=2Ω VDS=50V,ID=5A, VGS=10V Vplateau 5.0 V Drain-Source Diode Characteristics Diode Forward Current (Note 2) IS VGS