KRC103S

KRC101S…KRC106S NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Base (Input) R1 R2 Emitter (Common) TO-236 Plastic Package Resistor Values & Marking Code Type Marking Code R1 (KΩ) R2 (KΩ) KRC101S NA 4.7 4.7 KRC102S NB 10 10 KRC103S NC 22 22 KRC104S ND 47 47 KRC105S NE 2.2 47 KRC106S NF 4.7 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Output Voltage Input Voltage Symbol Value Unit VO 50 V KRC101S 20, -10 KRC102S 30, -10 KRC103S KRC104S VI 40, -10 V 40, -10 KRC105S 12, -5 KRC106S 20, -5 Output Current IO 100 mA Total Power Dissipation Ptot 200 mW Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range C C ® Dated: 16/03/2015 Rev: 01 KRC101S…KRC106S Characteristics at Ta = 25 OC Parameter DC Current Gain at VO = 5 V, IO = 10 mA KRC101S KRC102S KRC103S KRC104S KRC105S KRC106S Output Cutoff Current at VO = 50 V Input Current at VI = 5 V KRC101S KRC102S KRC103S KRC104S KRC105S KRC106S Output Voltage at IO = 10 mA, II = 0.5 mA Input Voltage (ON) at VO = 0.2 V, IO = 5 mA Input Voltage (OFF) at VO = 5 V, IO = 0.1 mA Transition Frequency at VO = 10 V, IO = 5 mA 1) KRC101S KRC102S KRC103S KRC104S KRC105S KRC106S KRC101S~104S KRC105S~106S Symbol Min. Typ. Max. Unit GI 30 50 70 80 80 80 - - - IO(OFF) - - 500 nA II - - 1.8 0.88 0.36 0.18 3.6 1.8 mA VO(ON) - - 0.3 V VI(ON) - - 2 2.4 3 5 1.1 1.3 1 0.5 - - V - 200 - MHz VI(OFF) fT 1) V Characteristic of transistor only. ® Dated: 16/03/2015 Rev: 01