KIA3510AB

KIA 75A，100V N-CHANNEL MOSFET 3510A SEMICONDUCTORS 1. Features n RDS(on)=9mΩ（typ.）@ VGS=10V n 100% avalanche tested n Reliable and rugged n Lead free and green device available（RoHS Compliant） 2. Applications n Switching application n Power management for inverter systems 3.Symbol 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.2 Apr 2015 KIA 75A，100V N-CHANNEL MOSFET 3510A SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol (TA=25°C,unless otherwise noted) Rating Units To-220/263 To-252 Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±25 V TJ 175 ºC TSTG -55 to175 ºC Maximum junction temperature Storage temperature range Continuous drain current TC=25ºC TC=100ºC ID3 75 65 A 51 44 A IDP4 219 A Avalanche current IAS5 30 A Avalanche energy EAS5 225 mJ 166 W 83 W Pulsed drain current Maximum power dissipation TC=25ºC TC=25 ºC TC=100ºC PD 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance,Junction-ambient RθJA 62.5 ºC/W Thermal resistance,Junction-case RθJC 0.9 ºC/W 2 of 6 Rev 1.2 Apr 2015 KIA 75A，100V N-CHANNEL MOSFET 3510A SEMICONDUCTORS 6. Electrical characteristics Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current (TA=25°C,unless otherwise noted) Min Typ Max Units Symbol Test Conditions BVDSS VGS=0V,IDS=250Μa 100 - - VDS=80V, VGS=0V - - 1 - - 20 IDSS TJ=125°C μA VGS(th) VDS=VGS, ID=250μA 2.0 3.0 4.0 V IGSS VGS=+25V, VDS=0V - - +100 nA - 9 11 VGS=10V,IDS=50A Drain-source on-state resistance V (TO-220\TO-263) RDS(on)1 mΩ VGS=10V,IDS=50A (TO-252) 9 14 Rg VDS=0V, VGS=0V,f=1MHz - 1.2 - Ω Diode forward voltage VSD1 ISD=50A, VGS=0V - - 1.3 V Reverse recovery time trr ISD=50A , - 46 - nS Reverse recovery charge Qrr dlSD/dt=100A/μs - 86 - nC Input capacitance Ciss - 2946 - Output capacitance Coss - 339 - Reverse transfer capacitance Crss - 179 - Turn-on delay time td(on) - 15 - - 108 - - 51 - - 59 - - 60 - - 13.7 -- - 22.8 -- Gate resistance Rise time VDS=25V,VGS=0V, f=1MHz tr Turn-off delay time Fall time VDD=50V,IDS=30A, td(off) RG=6.8Ω,VGS=10V tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=50V,VGS=10V IDS=30A Note : 1. Pulse test; pulse width