SIT2018BE-S3-18N-22.579200E

SiT2018B High Temp, Single-Chip, SOT23 Oscillator Features          Applications Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places Operating temperature from -40°C to 125°C. For -55°C option, refer to SiT2020 and SiT2021 Supply voltage of 1.8V or 2.5V to 3.3V Excellent total frequency stability as low as ±20 ppm Low power consumption of 3.5 mA typical at 1.8V LVCMOS/LVTTL compatible output 5-pin SOT23-5 package: 2.9 mm x 2.8 mm RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free For AEC-Q100 SOT23 Oscillators, refer to SiT2024 and SiT2025  Industrial, medical, automotive, avionics and other high temperature applications  Industrial sensors, PLC, motor servo, outdoor networking equipment, medical video cam, asset tracking systems, etc. Electrical Specifications All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. Table 1. Electrical Characteristics Parameters Output Frequency Range Frequency Stability Symbol Min. f 1 F_stab -20 -25 -30 -50 Operating Temperature Range (ambient) Supply Voltage Current Consumption OE Disable Current Standby Current Duty Cycle Rise/Fall Time T_use -40 -40 Vdd Idd I_od I_std 1.62 Typ. – Max. Unit Frequency Range 110 MHz Refer to Table 14 for the exact list of supported frequencies Frequency Stability and Aging – +20 ppm Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply – +25 ppm voltage and load (15 pF ± 10%). – +30 ppm – +50 ppm Operating Temperature Range – +105 °C Extended Industrial – +125 °C Automotive Supply Voltage and Current Consumption 1.8 1.98 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – – 3.63 V 3.8 4.7 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V – 3.6 4.5 mA No load condition, f = 20 MHz, Vdd = 2.5V – 3.5 – 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V – 4.5 mA Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state. – – 4.3 mA Vdd = 1.8V, OE = Low, Output in high Z state. – 2.6 8.5 A Vdd = 2.8V to 3.3V, ST = Low, Output is weakly pulled down – 1.4 5.5 A Vdd = 2.5V, ST = Low, Output is weakly pulled down – 0.6 4.0 A Vdd = 1.8V, ST = Low, Output is weakly pulled down LVCMOS Output Characteristics – 55 % All Vdds DC 45 Tr, Tf – 1.0 2.0 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% – 1.3 2.5 ns Vdd =1.8V, 20% - 80% Vdd = 2.25V - 3.63V, 20% - 80% – 1.0 3 ns Output High Voltage VOH 90% – – Vdd Output Low Voltage VOL – – 10% Vdd Rev. 1.02 Condition April 27, 2018 IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V or 2.5V) IOH = -2 mA (Vdd = 1.8V) IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V or 2.5V) IOL = 2 mA (Vdd = 1.8V) www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition Input Characteristics Input High Voltage VIH 70% – – Vdd Pin 3, OE or ST Input Low Voltage VIL – – 30% Vdd Pin 3, OE or ST Input Pull-up Impedance Z_in 50 87 150 k Pin 3, OE logic high or logic low, or ST logic high 2 – – M Pin 3, ST logic low Startup and Resume Timing Startup Time Enable/Disable Time Resume Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * clock periods T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter T_jitt Peak-to-peak Period Jitter T_pk RMS Phase Jitter (random) T_phj – 1.6 2.5 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V – 1.9 3 ps f = 75 MHz, Vdd = 1.8V – 12 20 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V – 14 25 ps f = 75 MHz, Vdd = 1.8V – 0.5 0.8 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz – 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Table 2. Pin Description Pin Symbol 1 GND Power 2 NC No Connect Top View Functionality OE / / NC NC GND Electrical ground No connect [1] Output Enable H : specified frequency output L: output is high impedance. Only output driver is disabled. [1] H or Open : specified frequency output 3 OE/ ST ̅ ̅ ̅ /NC Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. [1] No Connect Any voltage between 0 and Vdd or Open : Specified frequency output. Pin 3 has no function. [2] 4 VDD Power Power supply voltage 5 OUT Output Oscillator output VDD OUT Figure 1. Pin Assignments Notes: 1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 3 is not externally driven. If pin 3 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Rev. 1.02 Page 2 of 16 www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specificat ions, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 °C Vdd -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C – 150 °C Junction Temperature [3] Note: 3. Exceeding this temperature for extended period of time may damage the device. [4] Table 4. Thermal Consideration Package JA, 4 Layer Board JC, Bottom (°C/W) (°C/W) SOT23-5 421 175 Note: 4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. [5] Table 5. Maximum Operating Junction Temperature Max Operating Temperature (ambient) Maximum Operating Junction Temperature 105°C 115°C 125°C 135°C Note: 5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev. 1.02 Page 3 of 16 www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Test Circuit and Waveform[6] Vout Test Point Vdd tr 15 pF (including probe and fixture capacitance) 80% Vdd 4 5 1 2 tf 0.1µF 3 50% Power Supply 20% Vdd High Pulse (TH) Period Vdd 1kΩ Low Pulse (TL) OE/ST Function Figure 2. Test Circuit Figure 3. Output Waveform Note: 6. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd [7] T_start Pin 4 Voltage No Glitch during start up T_resume ST Voltage CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_resume: Time to resume from ST Figure 4. Startup Timing (OE/ ST Mode) Figure 6. Standby Resume Timing ( ST Mode Only) Vdd Vdd 50% Vdd OE Voltage 50% Vdd T_oe OE Voltage T_oe CLK Output CLK Output HZ HZ T_oe: Time to put the output in High Z mode T_oe: Time to re-enable the clock output Figure 7. OE Disable Timing (OE Mode Only) Figure 5. OE Enable Timing (OE Mode Only) Note: 7. SiT2018 has “no runt” pulses and “no glitch” output during startup or resume. Rev. 1.02 Page 4 of 16 www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Performance Plots[8] 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 6.0 DUT15 DUT16 DUT10 DUT11 DUT17 DUT18 5.5 Frequency (ppm) Idd (mA) 5.0 4.5 4.0 3.5 3.0 0 40 20 80 60 100 5 Figure 8. Idd vs Frequency 1.8 V 2.5 V 2.8 V 3.0 V 125 Figure 9. Frequency vs Temperature 1.8 V 3.3 V 2.5 V 2.8 V 3.0 V 3.3 V 55 4.0 54 3.5 53 3.0 Duty cycle (%) RMS period jitter (ps) 45 2.5 2.0 1.5 52 51 50 49 48 1.0 47 0.5 46 0.0 0 20 40 60 80 45 100 0 Figure 10. RMS Period Jitter vs Frequency 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 2.5 2.0 2.0 1.5 1.0 60 80 100 2.5 V 2.8 V 20 40 3.0 V 3.3 V 1.5 1.0 0.5 0.5 0.0 -40 -20 0 20 40 60 80 100 0.0 120 -40 Figure 12. 20%-80% Rise Time vs Temperature Rev. 1.02 40 Figure 11. Duty Cycle vs Frequency Fall time (ns) Rise time (ns) 1.8 V 20 -20 0 60 80 100 120 Figure 13. 20%-80% Fall Time vs Temperature Page 5 of 16 www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Performance Plots[8] 2.5 V 2.8 V 3.0 V 3.3 V IPJ (ps) IPJ (ps) 1.8 V Figure 14. RMS Integrated Phase Jitter Random [9] (12k to 20 MHz) vs Frequency Figure 15. RMS Integrated Phase Jitter Random [9] (900 kHz to 20 MHz) vs Frequency Notes: 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies up to 40 MHz. Rev. 1.02 Page 6 of 16 www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Programmable Drive Strength The SiT2018 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time.  Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time.  Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section.  The SiT2018 can support up to 60 pF in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. SiT2018 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT2018 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. EMI Reduction by Slowing Rise/Fall Time Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that th the 11 clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. trise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 10 Harmonic amplitude (dB) 0 -10 -20 Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature can be calculated as the following: 1 Max Frequency = 5 x Trf_20/80 where Trf_20/80 is the typical value for 20%-80% rise/fall time. -30 Example 1 -40 Calculate fMAX for the following condition: -50 -60 -70 -80 1 3 5 7 9 11 Harmonic number Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time  Vdd = 1.8V (Table 7)  Capacitive Load: 30 pF  Desired Tr/f time = 3 ns (rise/fall time part number code = E) Part number for the above example: SiT2018BIES2-18E-66.666660 Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. Drive strength code is inserted here. Default setting is “-” High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT2018 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT2018. Rev. 1.02 Page 7 of 16 www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Drive Strength \ CLOAD L A R B T E U F or "‐": default Rise/Fall Time Typ (ns) 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R B T E or "‐": default U F 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD L A R B T E or "‐": default U F 45 pF 60 pF 4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD Rise/Fall Time Typ (ns) 5 pF 15 pF 30 pF Rise/Fall Time Typ (ns) 5 pF 3.77 1.94 1.29 0.97 15 pF 7.54 3.90 2.57 2.00 30 pF 12.28 7.03 4.72 3.54 45 pF 19.57 10.24 7.01 5.43 60 pF 25.27 13.34 9.06 6.93 0.55 1.12 2.08 3.22 4.08 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 Drive Strength \ CLOAD L A R B T or "‐": default E U F 5 pF 3.60 1.84 15 pF 7.21 3.71 30 pF 11.97 6.72 45 pF 18.74 9.86 60 pF 24.30 12.68 1.22 0.89 2.46 1.92 4.54 3.39 6.76 5.20 8.62 6.64 0.51 0.38 0.30 0.27 1.00 0.92 0.83 0.76 1.97 1.72 1.55 1.39 3.07 2.71 2.40 2.16 3.90 3.51 3.13 2.85 Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD L 5 pF 3.39 1.74 1.16 0.81 15 pF 6.88 3.50 2.33 1.82 30 pF 11.63 6.38 4.29 3.22 45 pF 17.56 8.98 6.04 4.52 60 pF 23.59 12.19 8.34 6.33 E U 0.46 0.33 0.28 1.00 0.87 0.79 1.86 1.64 1.46 2.60 2.30 2.05 3.84 3.35 2.93 F 0.25 0.72 1.31 1.83 2.61 A R B T or "‐": default Rev. 1.02 Page 8 of 16 www.sitime.com SiT2018B High Temp, Single-Chip, SOT23 Oscillator Pin 1 Configuration Options (OE, ST ̅ ̅ ̅ , or NC) Output on Startup and Resume Pin 3 of the SiT2018 can be factory-programmed to support three modes: Output Enable (OE), standby ( ST ) or No Connect (NC). The SiT2018 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. Output Enable (OE) Mode In addition, the SiT2018 supports “no runt” pulses, and “no glitch” output during startup or resume as shown in the waveform captures in Figure 17 and Figure 18. In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in