MLA-01122B-C4EVB

MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier FEATURES • • • • • • • • • • APPLICATIONS 1.0 to 12 GHz • Microwave Point-to-Point Radios 1.3 dB @ 2.0 GHz • Satellite and Telemetry Communications 1.4 dB @ 6.0 GHz • Test Instrumentation 1.9 dB @ 12.0 GHz • EW Receiver Systems P-1dB: 16 dBm @ 6.0 GHz • Wide-band Communication Systems OIP3: 27 dBm @ 6.0 GHz • Commercial Wireless Systems Gain: 17 dB @ 6.0 GHz Bias Condition: VDD = 5 V IDD = 55 mA 50-Ohm On-chip Matching Unconditionally Stable: 50 MHz to 20 GHz Gain Control Option Available with 2nd Gate Control Voltage 4x4 mm, 24 Lead Ceramic SMT Package Wideband: NF: DESCRIPTION The MLA-01122B-C4 is a packaged fully-matched broadband Low-Noise MMIC amplifier utilizing high-reliability lownoise GaAs PHEMT technology. This MMIC is suited for Satellite Communications, Microwave radios, Instrumentation, Wideband Systems and also many commercial wireless applications where low-noise figure with high-gain is desirable. It has excellent gain (17 dB) and Noise Figure (1.4 dB, mid-band) over a broad frequency range. Typical P-1dB is 16 dBm and OIP3 is +27dBm @ 6 GHz. It has on-chip bias circuit, choke and DC blocking to provide bias stability and ease of use. The 2nd Gate voltage input can be used for gain control if necessary. Available in 4x4mm, 24 Lead Ceramic SMT Package. ELECTRICAL SPECIFICATIONS: P A R A M ET ER F requenc y R ange VDD=+5.0V, VG1=+0.13V, VG2=+2V, IDD=55 mA, Ta=25 C, ZO=50 ohm T ES T C O N D IT IO N S 1 - 8 G Hz 10 - 12 G H z 1 - 8 G Hz 1 - 12 G H z 2 G Hz 5 G Hz 10 G H z G ain G ain F latnes s Input R eturn Los s O utput R eturn Los s O utput P 1dB O utput IP 3 @ 0 dB m /tone, 1 M H z s eparation N ois e F igure O perating B ias C onditions : V D D ID D S tability F ac tor K 2 G Hz 6 G Hz 10 G H z 12 G H z 2 G Hz 6 G Hz 12 G H z 2 G Hz 6 G Hz 12 G H z V G 1= + 0.13V , V G 2= + 2V 0.05 to 20 G H z T YP IC A L D A T A 1-12 17 19 0.7 1.5 15 9.5 13 11 17.5 16.0 15.0 13.0 30 27 25 1.3 1.4 1.9 +5 55 (1) U N IT S G Hz dB + /-dB dB dB dB m dB m dB V mA > 1 (1) A ll data is meas ured on Ev aluation Board, w ith V G2 bias der iv ed f rom V DD bias us ing r es is tiv e v oltage div ider as s how n in Ev aluation Boar d Sc hematic & Lay out. (2) V g1 c an be s lightly pos itiv e or negativ e depending on the lot and operation c urrent. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 1 of 4, Updated July 2017 MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier TYPICAL RF PERFORMANCE: VDD=+5.0V, VG1=+0.13V, VG2=+2V, IDD=55 mA, Ta=25 C, ZO=50 ohm Re turn Loss v e rsus Fre que ncy G ain v e rsu s F r e q ue n cy & T em p +25 C +85 C Input - 40 C Return Loss (dB) Gain (dB) 19 17 15 13 -5 -10 -15 -20 11 0 1 2 3 4 5 6 7 8 0 9 1 0 11 12 13 14 1 2 3 F re q u e nc y (G H z ) 4 5 6 7 8 9 10 11 12 13 14 Fre que ncy (G H z ) N oise Figure v e rsus Fre que ncy C orre cte d for PC B Input Loss Iso latio n v e rsus F re qu e n cy 2.4 Noise Figure (dB) 0 Isolation (dB) O utput 0 21 -10 -20 -30 0 1 2 3 4 5 6 7 8 2.2 2 1.8 1.6 1.4 1.2 1 9 10 11 12 13 14 0 1 2 3 4 F re q u e n cy (G H z ) 5 V , 55m A 5 6 7 8 9 10 11 12 13 14 Fre que ncy (G H z ) P-1d B v e r su s Fr e q u en cy & B ias O utput IP3 v e rsus Fre que ncy 6.5 V , 65m A 22 34 20 32 OIP3 (dBm) P-1dB (dBm) (1) 18 16 14 30 28 26 24 22 12 0 1 2 3 4 5 6 7 8 9 10 F r e q ue n cy ( G H z ) 11 12 13 14 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Fre que ncy (G H z ) MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 2 of 4, Updated July 2017 MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier EVALUATION BOARD LAYOUT: APPLICATION CIRCUIT SCHEMATIC: Notes: 1) Package Backside is RF/DC GND and must be well grounded through PCB vias. 2) External DC bypass capacitors must be placed as close to package as possible. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 3 of 4, Updated July 2017 MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier MECHANICAL INFORMATION Outline Drawing 19 24 0.32 1 18 6 13 7 12 Notes: 1) 2) 3) 4) 5) 4X4 mm, 24 Lead Ceramic Package Outline Drawing. Dimensions are in millimeters. Lead and Ground Paddle Plating: Gold Package Material: Black Alumina All GND Leads and Backside Paddle must be grounded to PCB RF/DC ground. ABSOLUTE MAXIMUM RATINGS SYM BOL PARAM ETERS UNITS M AX V DD Drain V oltage V 7 IDD Drain Current mA 100 0.4 Pdiss DC Pow er Dissipation W Pin max RF Input Pow er dBm 13 Toper Operating Case/Lead Temp Range ºC -40 to +85 Tch Channel Temperature ºC 150 Functional Diagram Tstg Storage Temperature ºC -60 to 150 Exceeding any on of these limits may cause permanent damage. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 4 of 4, Updated July 2017