PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
400W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
KEY PARAMETERS
AEC-Q101 qualified
Low profile package
Photo Glass passivated junction
Excellent clamping capability
Moisture sensitivity level: level 1, per J-STD-020
400 watts peak pulse power capability with a 10 / 1000 μs
waveform (300W above 78V)
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
UNIT
VWM
10 - 100
V
VBR
11.7 - 117
V
TJ MAX
175
°C
Package
DO-214AC (SMA)
Configuration
Single die
Case: DO-214AC (SMA)
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.06 g (approximately)
DO-214AC (SMA)
eco
●
●
●
●
●
●
VALUE
mm
●
●
●
●
PARAMETER
en
de
d
●
●
●
●
●
●
No
tR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Peak power dissipation (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
unidirectional only
Operating junction temperature range
Storage temperature range
SYMBOL
VALUE
UNIT
PPPM
400
W
PD
1
W
IFSM
40
A
VF
3.5
V
TJ
-55 to +175
°C
TSTG
-55 to +175
°C
Notes:
1. Non-repetitive Current Pulse Per Fig.3 and derated above TA=25°C Per Fig.2. Rating is 300 W for VWM > 78 V
Devices for Bi-directional Applications
1. For Bi-directional use CA suffix (e.g. PGSMAJ10CA).
2. Electrical Characteristics Apply in Both Directions
1
Version:B1805
PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
TYP.
UNIT
RӨJL
RӨJA
RӨJC
29
120
31
°C/W
°C/W
°C/W
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
No
23.5
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.8
5.5
5.2
4.9
4.6
4.3
4.1
3.9
3.5
3.3
3.2
2.2
2.1
1.9
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
d
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum clamping
voltage
VC@IPPM (V)
tp =10/1000 μs
de
Max.
12.30
13.50
14.70
15.90
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86
92.1
95.8
104
111
123
Maximum peak
impulse current
IPPM (A)
tp =10/1000 μs
en
Min.
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
Maximum reverse
leakage current
IR@VWM
(µA)
(Note 1)
mm
PAX
PAZ
PBE
PBG
PBK
PBM
PBP
PBR
PBT
PBV
PBX
PBZ
PCE
PCG
PCK
PCM
PCP
PCR
PCT
PCV
PCX
PCZ
PRE
PRG
PRK
PRM
PRP
PRR
PRT
PRV
PRX
PRZ
Working
stand-off
voltage
VWM
(V)
e co
PGSMAJ10A
PGSMAJ11A
PGSMAJ12A
PGSMAJ13A
PGSMAJ14A
PGSMAJ15A
PGSMAJ16A
PGSMAJ17A
PGSMAJ18A
PGSMAJ20A
PGSMAJ22A
PGSMAJ24A
PGSMAJ26A
PGSMAJ28A
PGSMAJ30A
PGSMAJ33A
PGSMAJ36A
PGSMAJ40A
PGSMAJ43A
PGSMAJ45A
PGSMAJ48A
PGSMAJ51A
PGSMAJ54A
PGSMAJ58A
PGSMAJ60A
PGSMAJ64A
PGSMAJ70A
PGSMAJ75A
PGSMAJ78A
PGSMAJ85A
PGSMAJ90A
PGSMAJ100A
Test current
IT
(mA)
tR
Part number
Marking
code
Breakdown
voltage
VBR@IT
(V)
(Note 1)
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
2. Mounted on 5 x 5mm copper pads to each terminal
3. Lead temperature at TL=75°C
4. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
5. Peak pulse power waveform is 10/1000 μs
2
Version:B1805
PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
PACKING
PGSMAJxxxAHE3G
Clip SMA
1,800 / 7” Plastic reel
PGSMAJxxxAHE2G
Clip SMA
7,500 / 13” Plastic reel
PGSMAJxxxA E3G
Clip SMA
1,800 / 7” Plastic reel
PGSMAJxxxA E2G
Clip SMA
7,500 / 13” Plastic reel
PGSMAJxxxCAHE3G
Clip SMA
1,800 / 7” Plastic reel
PGSMAJxxxCAHE2G
Clip SMA
7,500 / 13” Plastic reel
PGSMAJxxxCA E3G
Clip SMA
1,800 / 7” Plastic reel
PGSMAJxxxCA E2G
Clip SMA
7,500 / 13” Plastic reel
PGSMAJxxxA R3G
SMA
1,800 / 7” Plastic reel
PGSMAJxxxAHR3G
SMA
1,800 / 7” Plastic reel
PGSMAJxxxA M2G
SMA
7,500 / 13” Plastic reel
PGSMAJxxxAHM2G
SMA
de
PACKAGE
mm
en
ORDERING CODE
(Note 1)
d
ORDERING INFORMATION
7,500 / 13” Plastic reel
No
tR
e co
Note 1:
"xxx" defines voltage from 10V (PGSMAJ10A) to 100V (PGSMAJ100A)
3
Version:B1805
PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.2 Pulse Derating Curve
PEAK PULSE POWER (PPPM) OR CURRENT(IPP)
DERATING IN PERCENTAGE (%)
Fig.1 Peak Pulse Power Rating Curve
100
PGSMAJ10A - PGSMAJ78A
1
PGSMAJ85A - PGSMAJ100A
0.1
1
10
100
1000
td - PULSE WIDTH (μs)
50
25
10000
0
0
25
50
75
100
125
150
175
mm
0
75
d
10
de
Non-Repetitive Pulse
Waveform Shown in Fig.3
TA=25°C
en
PPPM, PEAK PULSE POWER (KW)
100
TJ - INITIAL JUNCTION TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
Fig.4 Typical Junction Capacitance
100
tR
Rise time tr=10μs to 100%
80
Half value-IPPM/2
10/1000μs, waveform
as defined by R.E.A.
60
40
No
PEAK PULSE CURRENT (%)
120
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
CAPACITANCE (pF)
Peak value
IPPM
e co
1000
140
20
PGSMAJ10A
100
PGSMAJ40A
10
td
f=1.0MHz
Vsig=50mVp-p
1
0
0
0.5
1
1.5
2
2.5
1
3
10
100
REVERSE VOLTAGE (V)
t, TIME (ms)
4
Version:B1805
PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
DIM
Unit (mm)
Unit (inch)
Max
Min
Max
A
1.27
1.58
0.050
0.062
B
4.06
4.60
0.160
0.181
C
2.29
2.83
0.090
0.111
de
D
d
Min
1.99
2.50
0.078
0.098
0.90
1.41
0.035
0.056
4.95
5.33
0.195
0.210
G
0.10
0.20
0.004
0.008
H
0.15
0.31
0.006
0.012
E
e co
mm
en
F
Symbol
Unit (mm)
Unit (inch)
A
1.68
0.066
B
1.52
0.060
C
3.93
0.155
D
2.41
0.095
E
5.45
0.215
No
tR
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
G
YW
F
5
= Marking Code
= Green Compound
= Date Code
= Factory Code
Version:B1805
PGSMAJ10A - PGSMAJ100A
No
tR
e co
mm
en
de
d
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version:B1805
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