SMCJ75CA

SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor 1500W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated chip junction Excellent clamping capability Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Fast response time: Typically less than 1.0ps from 0 V to BV min Typical IR less than 1μA above 10V Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 170 V VBR 6.4 - 231 V PPK 1500 W TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die APPLICATIONS ● ● ● ● Protect sensitive circuit from damage by high voltage transients Lighting, ESD transient voltage protection of IC, system Inductive switching load protection of IC, system Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPK 1500 W PD 5 W IFSM 200 A VF 3.5 / 5.0 V Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Peak power dissipation at TA = 25°C, tp = 1ms (1) Steady state power dissipation at T A = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (2) Forward Voltage @ IF = 100A for Unidirectional only Notes: 1. Non-repetitive current pulse per Fig.5 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMCJ5.0 - SMCJ90 devices and VF = 5.0V on SMCJ100 - SMCJ170 devices Devices for bipolar applications 1. For bidirectional use C or CA suffix for types SMCJ5.0 - types SMCJ170 2. Electrical characteristics apply in both directions 1 Version: S2104 SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 55 °C/W Junction-to-case thermal resistance RӨJC 10 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number SMCJ5.0 SMCJ5.0A SMCJ5V0A SMCJ6.0 SMCJ6.0A SMCJ6V0A SMCJ6.5 SMCJ6.5A SMCJ6V5A SMCJ7.0 SMCJ7.0A SMCJ7V0A SMCJ7.5 SMCJ7.5A SMCJ7V5A SMCJ8.0 SMCJ8.0A SMCJ8V0A SMCJ8.5 SMCJ8.5A SMCJ8V5A SMCJ9.0 SMCJ9.0A SMCJ9V0A SMCJ10 SMCJ10A SMCJ11 SMCJ11A SMCJ12 SMCJ12A SMCJ13 SMCJ13A SMCJ14 SMCJ14A SMCJ15 SMCJ15A SMCJ16 SMCJ16A SMCJ17 SMCJ17A SMCJ18 SMCJ18A SMCJ20 SMCJ20A SMCJ22 SMCJ22A SMCJ24 SMCJ24A Marking code Breakdown voltage VBR@IT (V) Test current IT (mA) Working stand-off voltage VWM (V) Maximum Maximum peak impulse Reverse current Leakage (Note 2) (Note 3) IPPM IR@VWM (µA) (A) Maximum clamping voltage (Note 2) VC@IPPM (V) GDD Min 6.4 Max 7.3 10 5 1000 164 9.6 GDE 6.4 7 10 5 1000 171 9.2 GDF 6.67 8.15 10 6 1000 138 11.4 GDG 6.67 7.37 10 6 1000 152 10.3 GDH 7.22 8.82 10 6.5 500 128 12.3 GDK 7.22 7.98 10 6.5 500 140 11.2 GDL 7.78 9.51 10 7 200 118 13.3 GDM 7.78 8.6 10 7 200 131 12.0 GDN 8.33 10.30 1 7.5 100 110 14.3 GDP 8.33 9.21 1 7.5 100 122 12.9 GDQ 8.89 10.9 1 8 50 105 15.0 GDR 8.89 9.83 1 8 50 115 13.6 GDS 9.44 11.5 1 8.5 20 99 15.9 GDT 9.44 10.4 1 8.5 20 109 14.4 GDU 10 12.2 1 9 10 93 16.9 GDV 10 11.1 1 9 10 102 15.4 GDW GDX GDY GDZ GED GEE GEF GEG GEH GEK GEL GEM GEN GEP GEQ GER GES GET GEU GEV GEW GEX GEY GEZ 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20 20 22.2 22.2 24.4 24.4 26.7 26.7 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 83 92 78 86 71 79 66 73 61 67 58 64 54 60 51 57 48 53 43 48 39 44 36 40 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 2 Version: S2104 SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number SMCJ26 SMCJ26A SMCJ28 SMCJ28A SMCJ30 SMCJ30A SMCJ33 SMCJ33A SMCJ36 SMCJ36A SMCJ40 SMCJ40A SMCJ43 SMCJ43A SMCJ45 SMCJ45A SMCJ48 SMCJ48A SMCJ51 SMCJ51A SMCJ54 SMCJ54A SMCJ58 SMCJ58A SMCJ60 SMCJ60A SMCJ64 SMCJ64A SMCJ70 SMCJ70A SMCJ75 SMCJ75A SMCJ78 SMCJ78A SMCJ85 SMCJ85A SMCJ90 SMCJ90A SMCJ100 SMCJ100A SMCJ110 SMCJ110A SMCJ120 SMCJ120A SMCJ130 SMCJ130A SMCJ150 SMCJ150A SMCJ160 SMCJ160A SMCJ170 SMCJ170A Marking code GFD GFE GFF GFG GFH GFK GFL GFM GFN GFP GFQ GFR GFS GFT GFU GFV GFW GFX GFY GFZ GGD GGE GGF GGG GGH GGK GGL GGM GGN GGP GGQ GGR GGS GGT GGU GGV GGW GGX GGY GGZ GHD GHE GHF GHG GHH GHK GHL GHM GHN GHP GHQ GHR Breakdown voltage VBR@IT (V) Min 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40 40 44.4 44.4 47.8 47.8 50 50 53.3 53.3 56.7 56.7 60 60 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 Max 35.3 31.9 38 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 Test current IT (mA) Working stand-off voltage VWM (V) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 26 26 28 28 30 30 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 3 Maximum Maximum peak impulse Reverse current Leakage (Note 2) (Note 3) IPPM IR@VWM (µA) (A) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 33 37 31 34 29 32 26 29 24 27 22 24 20 22 19 21 18 20 17 19 16 18 15 16 14 16 13.8 15 12.6 13.9 11.7 13 11.3 12.5 10.4 11.5 9.8 10.7 8.8 9.7 8 8.9 7.3 8.1 6.8 7.5 5.8 6.4 5.4 6 5.1 5.7 Maximum clamping voltage (Note 2) VC@IPPM (V) 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 266 243 287 259 304 275 Version: S2104 SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor Notes: 1. VBR measure after IT applied for 30ms, IT = square wave pulse or equivalent 2. Surge current waveform per Fig.5 and derate per Fig.2 3. For bipolar types having VWM of 10V and under, the IR limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SMCJx DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 5V(SMCJ5.0) to 170V(SMCJ170) 4 Version: S2104 SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve PEAK PULSE POWER(PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER (kW) 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in Fig.5 10 1 0.1 0.1 1 10 100 1000 125 100 75 50 25 0 0 10000 Fig.3 Typical Junction Capacitance IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) UNIDIRECTIONAL BIDRECTIONA 10000 VR=0 100 VR-rated stand-off voltage 10 1 75 100 125 150 Fig.4 Maximum Non-repetitive Forward Surge Current 100000 f=1.0MHz Vsig=50mVp-p 50 TA, AMBIENT TEMPERATURE (°C) tp, PULSE WIDTH, (μs) 1000 25 10 1000 8.3ms single half sine wave Unidirectional only 100 10 1 1 100 10 100 NUMBER OF CYCLES AT 60 Hz V(BR), BREAKDOWN VOLTAGE (V) 5 Version: S2104 SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Clamping Power Pulse Waveform 120 IPPM, PEAK PULSE CURRENT (%) 110 Peak value IPPM 100 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 90 Rise time tr=10μs to 100% of IPPM 80 70 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 50 40 30 20 td 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t, TIME (ms) 6 Version: S2104 SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 7 Version: S2104 SMCJ5.0(A) – SMCJ170(A) Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: S2104