BPX85

NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays Lead (Pb) Free Product - RoHS Compliant BPX 80 BPX 82 … 89 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • Mehrstellige Zeilenbauform aus klarem Epoxy • Gruppiert lieferbar Features • Especially suitable for applications from 450 nm to 1100 nm • High linearity • Multiple-digit array package of transparent epoxy • Available in groups Applications • Miniature photointerrupters • Industrial electronics • For control and drive circuits Anwendungen • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type BPX 82 BPX 83 BPX 84 BPX 85 BPX 86 BPX 87 BPX 88 BPX 89 BPX 80 Bestellnummer Ordering Code Q62702P0021 Q62702P0025 Q62702P0030 Q62702P0031 Q62702P0022 Q62702P0032 Q62702P0033 Q62702P0026 Q62702P0028 Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V Photocurrent IPCE (mA) > 0.32 > 0.32 > 0.32 > 0.32 > 0.32 > 0.32 > 0.32 > 0.32 > 0.32 2007-04-04 1 BPX 80, BPX 82 … 89 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 μs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 … + 80 35 50 200 90 750 Einheit Unit °C V mA mA mW K/W Top; Tstg VCE IC ICS Ptot RthJA 2007-04-04 2 BPX 80, BPX 82 … 89 Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 20 V, E = 0 Symbol Symbol λS max λ Wert Value 850 450 … 1100 Einheit Unit nm nm A L×B L×W ϕ 0.11 0.5 × 0.5 ± 18 7.5 mm2 mm × mm Grad deg. pF CCE ICEO 1 (≤ 50) nA 2007-04-04 3 BPX 80, BPX 82 … 89 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit Buchstaben gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by alphabetic characters. Bezeichnung Parameter Fotostrom Photocurrent Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V Symbol Symbol -A -B Werte Value -C Einheit Unit IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee= 0.5 mW/cm2, λ = 950 nm 1) 1) 0.32…0.63 1.5 5.5 0.40…0.80 1.9 6 ≥ 0.50 2.3 8 mA mA μs tr , tf VCEsat 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. Die gelieferten Bauelemente sind mit -A, -B, -C gekennzeichnet. Wegen Ausbeuteschwankungen ist jedoch die Bestellung einer definierten Gruppe -A, -B, -C nicht möglich. For delivery the components are marked -A, -B, -C. Due to differing yields, it is not possible to order a definite group. 2007-04-04 4 BPX 80, BPX 82 … 89 Relative Spectral Sensitivity Srel = f (λ) 100 % 90 Srel 80 70 60 50 40 30 20 10 0 400 500 600 700 800 nm 900 1000 1100 lambda Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 8 Dark Current ICEO = f (VCE), E = 0 10 pF 7 CCE 6 5 4 3 nA I CEO 1 0.1 2 1 0 1E-03 0.01 1E-02 1E-01 1E+00 1E+01 VCE V 1E+02 0 5 10 15 20 25 30 V 35 V CE Directional Characteristics Srel = f (ϕ) Dark Current ICEO = f (TA), VCE = 20 V, E = 0 10000 nA 1000 I CEO 100 10 1 0.1 0.01 -25 0 25 50 75 TA °C 100 2007-04-04 5 BPX 80, BPX 82 … 89 Maßzeichnung Package Outlines 7.4 (0.291) 7.0 (0.276) 3.5 (0.138) 0.4 (0.016) 2.54 (0.100) spacing 0.7 (0.028) 0 ... 5˚ 0.6 (0.024) A 0.4 A 0.25 (0.010) 0.15 (0.006) 2.1 (0.083) 1.5 (0.059) 1.4 (0.055) 1.0 (0.039) Collector (BPX 83) Cathode (LD 263) GEOY6367 Maße in mm (inch) / Dimensions in mm (inch). . Transistoren pro Zeile Number of Transistors per Array 2 3 4 5 6 7 8 9 10 Maße „A“ Dimensions “A” 4.5 ... 4.9 7.0 ... 7.4 9.6 ... 10.0 12.1 ... 12.5 14.6 ... 16.0 17.2 ... 17.6 19.7 ... 20.1 22.3 ... 22.7 24.8 ... 25.2 2007-04-04 6 3.0 (0.118) 0.5 (0.020) 1.9 (0.075) 1.7 (0.067) 2.7 (0.106) 2.5 (0.098) 3.6 (0.142) 3.2 (0.126) Chip position BPX 80, BPX 82 … 89 Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) 300 C T 250 235 C ... 260 C OHLY0598 10 s Normalkurve standard curve 2. Welle 2. wave Grenzkurven limit curves 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling ca 200 K/s 5 K/s 2 K/s 0 0 50 100 150 t 200 s 250 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-04 7