ASDM4406S-R

ASDM4406S 30V N-Channel MOSFET Features Product Summary ● High Efficiency ● Low Dense Cell Design ● Advanced trench process technology ● improved dv/dt capability ● Reliable and Rugged V DS 30 V R DS(on),Typ@ VGS =10 V 8.1 8.1 mΩ ID 13 A Application ● Networking, Load Swtich ● LED lighting top view SOP-8 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Avalanche energy L=0.1mH TA=25°C B TA=70°C Power Dissipation Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead NOV 2018 Version3.0 Steady-State Steady-State 1/8 V A IDM 52 IAS 13 A EAS 24 3.1 mJ W 2 -55 to 150 TJ, TSTG Symbol t ≤ 10s ±20 10.4 PD Junction and Storage Temperature Range Units V 13 ID TA=70°C Maximum 30 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 www.ascendsemi.com Units °C/W °C/W °C/W 0755-86970486 ASDM4406S 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min Typ Max Units ID=250µA, VGS=0V 30 -- -- V VDS=30V, VGS=0V -- -- 1 TJ=85°C -- -- 30 µA IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.0 1.4 2.0 V ID(ON) On state drain current VGS=10V, VDS=5V 100 -- -- A VGS=10V, ID=12A TJ =125°C --- 11.5 15 mΩ VGS=4.5V, ID=10A -- 8.1 12 12.6 14 mΩ -- S RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=12A -- 45 VSD Diode Forward Voltage IS=1A,VGS=0V -- 0.75 IS Maximum Body-Diode Continuous Current -- -- 1 13 V A 610 760 910 pF 88 125 160 pF 40 70 100 pF 0.8 1.6 2.4 Ω 11 14 17 nC 5 6.6 8 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC 4.4 -- ns -- 9 -- ns -- 17 -- ns -- 6 -- ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=15V, f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) VGS=10V, VDS=15V, ID=12A VGS=4.5V, VDS=15V, ID=12A -- Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 6.4 8 9.6 VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using