ASDM3415EAZA-R

ASDM3415EAZA -20V P-Channel MOSFET Features ● ● ● ● Super Low Gate Charge Green Device Available Product Summary Excellent CdV/dt effect decline Advanced high cell density Trench technology -20 V R DS(on),Typ@VGS=-4.5 V 29 mΩ I -5 A V Application ● Battery protection ● Load switch ● Power management DS D Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V 10s 1 1 IDM Pulsed Drain PD@TA=25℃ Total Power Steady State -20 V ±10 V -5 -4 A -4 -3.7 A Current2 -16 Dissipation3 Units 1.32 A 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Max. Unit --- 125 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 95 ℃/W RθJC Thermal Resistance Junction-Case1 --- 80 ℃/W NOV 2021 Version1.0 Thermal Resistance Junction-Ambient Typ. RθJA 1/7 1 www.ascendsemi.com 0755-86970486 ASDM3415EAZA -20V P-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units -20 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V, - - -1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±10V - - ±10 uA Gate Threshold Voltage VDS= VGS, ID= -250μA -0.4 -0.6 -1.0 V Static Drain-Source on-Resistance VGS =-4.5V, ID =-4A - 29 36 note2 VGS =-2.5V, ID =-3A - 37 46 - 199 - pF - 67 - pF - 15 - pF - 9 - nC - 1 - nC - 2.6 - nC - 12 - ns - 35 - ns - 30 - ns - 10 - ns - - -4.0 A -16 A -1.2 V On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Qgs Total Gate Charge Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = -10V, VGS = 0V, f = 1.0MHz VDS = -10V, ID = -4.1A, VGS = -4.5V Switching Characteristics td(on) tr td(off) tf Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time VDD = -10V, RG = 1Ω, VGEN=-4.5V,RL=1.2Ω Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage - VGS = 0V, IS = -4.1A - - - Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM3415EAZA -20V P-Channel MOSFET Typical Performance Characteristics 20 -ID (A) Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics -ID (A) 20 16 16 VGS=4.5V VGS=-3V 12 100℃ 12 -2V 25℃ 8 8 4 4 0 0 1 2 -VDS(V) -1.5V 3 4 5 0 -VGS(V) 0 Figure 3:On-resistance vs. Drain Current 60 0.9 1.2 1.5 1.8 2.1 2.4 2.7 IS(A) 1E+01 1E+00 VGS=-2.5V 40 TJ=125℃ 1E-01 1E-02 30 VGS=-4.5V 20 25℃ 1E-03 1E-04 10 -ID(A) 0 0 1 2 3 4 5 6 -VSD(V) 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Figure 6: Capacitance Characteristics Figure 5: Gate Charge Characteristics 4 0.6 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 50 5 0.3 -VGS(V) C(pF) 420 VDS=-10V ID=-4.1A 350 Ciss 280 3 210 2 140 1 0 0 Coss 70 Qg(nC) 1.2 1.4 NOV 2021 Version1.0 3.6 4.8 6.0 3/7 7.2 8.4 9.6 0 0 -VDS(V) 3 6 9 Crss 12 www.ascendsemi.com 15 18 0755-86970486 ASDM3415EAZA -20V P-Channel MOSFET Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.3 VBR(DSS) 2.5 1.2 RDS(on) 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 150 100 200 0.5 -100 -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature Figure 9: Maximum Safe Operating Area 100 Tj (℃) -ID(A) 5 Limited by RDS(on) -ID(A) 4 10 10μs 3 100μs 1 2 1ms TC=25℃ Single pulse 0.1 0.01 1 DC -VDS (V) 1 0.1 0 10 TA (℃) 0 25 50 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 103 ZthJ-A(℃/W) 102 101 PDM D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJA+T 100 10-1 -4 10 -3 10 NOV 2021 Version1.0 -2 10 TP(s) 10-1 10 0 4/7 10 1 A 102 www.ascendsemi.com 0755-86970486 ASDM3415EAZA -20V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM3415EAZA-R XXXXXX SOT-23 PACKAGE Packing Tape&Reel Quantity 3000/Reel MARKING SOT-23 NOV 2021 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM3415EAZA -20V P-Channel MOSFET SOT-23 DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.90 1.01 1.15 A1 0.01 0.05 0.10 bp 0.30 0.42 0.50 c 0.08 0.13 0.15 D 2.80 2.92 3.00 E 1.20 1.33 1.40 e -- 1.90 -- e1 -- 0.95 -- HE 2.25 2.40 2.55 Lp 0.30 0.42 0.50 Q 0.45 0.49 0.55 v -- 0.20 -- w -- 0.10 -- NOV 2021 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM3415EAZA -20V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2021 Version1.0 7/7 www.ascendsemi.com 0755-86970486