ASDM60P12KQ-R

ASDM60P12KQ -60V P-Channel MOSFET Features ● High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation ● $SSOLFDWLRQV ● Load switch ● PWM application Product Summary VDS -60 V RDS(on),max.@VGS=10V 70 mΩ -12 A ID D G S TO-252 P-channel Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -12 A Pulsed Drain Current IDM -48 A Maximum Power Dissipation PD 50 W TJ,TSTG -55 To 175 ℃ Operating Junction and Storage Temperature Range 3.0 NOV 2021 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM60P12KQ -60V P-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 1.9 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-14A - 62 70 mΩ VGS=-4.5V, ID=-10A - 78 90 mΩ VDS=-5V,ID=-14A - 10 - S - 968 - PF - 88 - PF - 36 - PF - 8 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=-30V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-30V, RL=2Ω， - 4 - nS td(off) VGS=-10V,RG=3Ω - 32 - nS - 7 - nS - 25 - nC - 3 - nC - 7 - nC -1.2 V -12 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-30,ID=-14A, VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current VSD (Note 2) VGS=0V,IS=-14A IS Reverse Recovery Time Reverse Recovery Charge - - trr TJ = 25°C, IF =- 14A - 25 nS Qrr di/dt = -100A/μs(Note3) - 31 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM60P12KQ -60V P-Channel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Performance Characteristics TJ-Junction Temperature(℃) -Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) - ID- Drain Current (A) Figure 3 Rdson- Drain Current NOV 2021 Version1.0 3/7 -Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM60P12KQ C Capacitance (pF) -60V P-Channel MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) -ID- Drain Current (A) -Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 ID Current De-rating r(t),Normalized Effective Transient Thermal Impedance -Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM60P12KQ -60V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM60P12KQ-R 60P12 TO-252 PACKAGE Tape&Reel Quantity 2500/ Reel MARKING 60P12 TO-252 NOV 2021 Version1.0 Packing 5/7 www.ascendsemi.com 0755-86970486 ASDM60P12KQ -60V P-Channel MOSFET TO-252 NOV 2021 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM60P12KQ -60V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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