ASDM60P50KQ-R

ASDM60P50KQ -60V P-Channel MOSFET Product Summary General Features ● Super Low Gate Charge ● 100% EAS Guaranteed ● Green Device Available ● Excellent CdV/dt effect decline ● Advanced high cell density Trenchtechnology ● Halongen Free VDS -60 V RDS(on),max.@ VGS=10 V 25 mΩ ID -50 A $SSOLFDWLRQV ● '&'&SULPDU\EULGJH ● '&'&6\QFKURQRXVUHFWLILFDWLRQ D G S TO-252 P-channel Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ Parameter Rating Units Drain-Source Voltage -60 V Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ -10V 1 -50 A Continuous Drain Current, VGS @ -10V 1 -28 A Continuous Drain Current, VGS @ -10V 1 -24.3 A Continuous Drain Current, VGS @ -10V 1 -23.5 A 2 IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy 3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 4 TSTG TJ -80 A 115 mJ -45 A 4 52 W 2 W Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Typ. Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 NOV 2018 Version1.0 Thermal Resistance Junction-Case 1/7 1 Max. Unit --- 62 ℃/W --- 3.6 ℃/W www.ascendsemi.com 0755-86970486 ASDM60P50KQ -60V P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS 2 Min. Typ. VGS=0V , ID=-250uA -60 Reference to 25℃ , ID=-1mA VGS=-10V , ID=-1A VGS=-4.5V , ID=-1 VGS=VDS , ID =-250uA Max. Unit -70 --- V --- -0.03 --- V/℃ --- 20 25 --- 25 33 -1.0 -1.7- m -3.0 V --- 4.56 --- mV/℃ VDS=-60V , VGS=0V , TJ=25℃ --- --- 1 uA Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-12A --- 15.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz Total Gate Charge (-4.5V) Gate-Source Charge 13.5 26 -----  Qg Qgs ----- VDS=-48V , VGS=-4.5V , ID=-10A --- 3.08 --- Qgd Gate-Drain Charge --- 2.95 --- Td(on) Turn-On Delay Time nC --- 28.8 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 19.8 --- Turn-Off Delay Time ID=-1A --- 60.8 --- Fall Time --- 7.2 --- Ciss Input Capacitance --- 3447 --- Coss Output Capacitance --- 223 --- Crss Reverse Transfer Capacitance --- 140 --- Min. Typ. Max. Unit --- --- -18 A --- --- -36 A --- --- -1.2 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD 2,5 Diode Forward Voltage 2 Conditions 1,5 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-25.1A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. NOV 2018 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM60P50KQ -60V P-Channel MOSFET Typical Characteristics 160 12 ID=-12A VGS=-3V 120 8 RDSON (mΩ) -ID Drain Current (A) 10 6 VGS=-10V 4 80 VGS=-7V VGS=-5V 2 VGS=-4.5V 0 40 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 2 4 Fig.1 Typical Output Characteristics 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 10 ID=-12A -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 8 6 4 2 0 0 1 -VSD , Source-to-Drain Voltage (V) 10 15 20 25 QG , Total Gate Charge (nC) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.5 Normalized On Resistance 1.5 Normalized VGS(th) (V) 5 2.0 1 1.5 0.5 1.0 0.5 0 -50 0 50 o 100 TJ ,Junction Temperature ( C) Fig.5 Normalized VGS(th) v.s TJ NOV 2018 Version1.0 3/7 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ www.ascendsemi.com 0755-86970486 ASDM60P50KQ -60V P-Channel MOSFET 100.00 10000 F=1.0MHz 10us 100us Capacitance (pF) Ciss 10.00 1ms 1000 -ID (A) 10ms 100ms 1.00 DC Coss 100 0.10 Crss TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 0.1 1 10 100 1000 -VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform NOV 2018 Version1.0 4/7 Fig.11 Unclamped Inductive Waveform www.ascendsemi.com 0755-86970486 ASDM60P50KQ -60V P-Channel MOSFET Ordering and Marking Information Device Marking Package Packaging Quantity ASDM60P50KQ 60P50 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE Lot Number TO-252 60P50 Date Code NOV 2018 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM60P50KQ -60V P-Channel MOSFET 6\PERO 'LPHQVLRQVLQ0LOOLPHWHUV 'LPHQVLRQVLQ,QFKHV 0LQ 0D[ 0LQ 0D[ $     $     $     E     E     F     F     '     '     (     (     +    7